Author: Paul F Fewster
Publisher: World Scientific
ISBN: 178326098X
Category : Technology & Engineering
Languages : en
Pages : 315
Book Description
This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.
X-ray Scattering From Semiconductors (2nd Edition)
High-Resolution X-Ray Scattering
Author: Ullrich Pietsch
Publisher: Springer Science & Business Media
ISBN: 9780387400921
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.
Publisher: Springer Science & Business Media
ISBN: 9780387400921
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.
X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures
Author: Martin Schmidbauer
Publisher: Springer Science & Business Media
ISBN: 9783540201793
Category : Science
Languages : en
Pages : 224
Book Description
This monograph represents a critical survey of the outstanding capabilities of X-ray diffuse scattering for the structural characterization of mesoscopic material systems. The mesoscopic regime comprises length scales ranging from a few up to some hundreds of nanometers. It is of particular relevance at semiconductor layer systems where, for example, interface roughness or low-dimensional objects such as quantum dots and quantum wires have attracted much interest. An extensive overview of the present state-of-the-art theory of X-ray diffuse scattering at mesoscopic structures is given followed by a valuable description of various experimental techniques. Selected up-to-date examples are discussed. The aim of the present book is to combine aspects of self-organized growth of mesoscopic structures with corresponding X-ray diffuse scattering experiments.
Publisher: Springer Science & Business Media
ISBN: 9783540201793
Category : Science
Languages : en
Pages : 224
Book Description
This monograph represents a critical survey of the outstanding capabilities of X-ray diffuse scattering for the structural characterization of mesoscopic material systems. The mesoscopic regime comprises length scales ranging from a few up to some hundreds of nanometers. It is of particular relevance at semiconductor layer systems where, for example, interface roughness or low-dimensional objects such as quantum dots and quantum wires have attracted much interest. An extensive overview of the present state-of-the-art theory of X-ray diffuse scattering at mesoscopic structures is given followed by a valuable description of various experimental techniques. Selected up-to-date examples are discussed. The aim of the present book is to combine aspects of self-organized growth of mesoscopic structures with corresponding X-ray diffuse scattering experiments.
Amorphous Chalcogenide Semiconductors and Related Materials
Author: Keiji Tanaka
Publisher: Springer Nature
ISBN: 3030695980
Category : Technology & Engineering
Languages : en
Pages : 300
Book Description
This book provides introductory, comprehensive, and concise descriptions of amorphous chalcogenide semiconductors and related materials. It includes comparative portraits of the chalcogenide and related materials including amorphous hydrogenated Si, oxide and halide glasses, and organic polymers. It also describes effects of non-equilibrium disorder, in comparison with those in crystalline semiconductors.
Publisher: Springer Nature
ISBN: 3030695980
Category : Technology & Engineering
Languages : en
Pages : 300
Book Description
This book provides introductory, comprehensive, and concise descriptions of amorphous chalcogenide semiconductors and related materials. It includes comparative portraits of the chalcogenide and related materials including amorphous hydrogenated Si, oxide and halide glasses, and organic polymers. It also describes effects of non-equilibrium disorder, in comparison with those in crystalline semiconductors.
Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gösele
Author: C. Colinge
Publisher: The Electrochemical Society
ISBN: 1566778239
Category : Science
Languages : en
Pages : 656
Book Description
Semiconductor wafer bonding continues to evolve as a crucial technology extending new integration schemes and disseminating new product architectures in such diverse areas as high quality silicon-on-insulator (SOI) materials for electronic applications, Si-Ge strained layers, Germanium-on-Insulator (GeOI), 3D device integration, Si on quartz or glass for thin film displays, compound semiconductor-on-Si heterostructures and Micro-Electro-Mechanical Systems.
Publisher: The Electrochemical Society
ISBN: 1566778239
Category : Science
Languages : en
Pages : 656
Book Description
Semiconductor wafer bonding continues to evolve as a crucial technology extending new integration schemes and disseminating new product architectures in such diverse areas as high quality silicon-on-insulator (SOI) materials for electronic applications, Si-Ge strained layers, Germanium-on-Insulator (GeOI), 3D device integration, Si on quartz or glass for thin film displays, compound semiconductor-on-Si heterostructures and Micro-Electro-Mechanical Systems.
Electron Spectrum of Gapless Semiconductors
Author: J. Tsidilkovski
Publisher: Springer Science & Business Media
ISBN: 364260403X
Category : Technology & Engineering
Languages : en
Pages : 259
Book Description
A presentation of the peculiarities of the physical properties of a comparatively new class of solids. GSs are of practical interest since they are very sensitive to impurities, and to the influence of light, magnetic and electric fields, and to pressure.
Publisher: Springer Science & Business Media
ISBN: 364260403X
Category : Technology & Engineering
Languages : en
Pages : 259
Book Description
A presentation of the peculiarities of the physical properties of a comparatively new class of solids. GSs are of practical interest since they are very sensitive to impurities, and to the influence of light, magnetic and electric fields, and to pressure.
Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures
Author: Jagdeep Shah
Publisher: Springer Science & Business Media
ISBN: 3662032996
Category : Science
Languages : en
Pages : 386
Book Description
Publisher: Springer Science & Business Media
ISBN: 3662032996
Category : Science
Languages : en
Pages : 386
Book Description
Semiconductor Strain Metrology
Author: Terence K. S. Wong
Publisher: Bentham Science Publishers
ISBN: 1608053598
Category : Technology & Engineering
Languages : en
Pages : 141
Book Description
This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterizati
Publisher: Bentham Science Publishers
ISBN: 1608053598
Category : Technology & Engineering
Languages : en
Pages : 141
Book Description
This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterizati
Characterization of Semiconductor Heterostructures and Nanostructures
Author: Giovanni Agostini
Publisher: Newnes
ISBN: 044459549X
Category : Technology & Engineering
Languages : en
Pages : 829
Book Description
Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures
Publisher: Newnes
ISBN: 044459549X
Category : Technology & Engineering
Languages : en
Pages : 829
Book Description
Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures
Engineering Physics, 2nd Edition
Author: G. Vijayakumari
Publisher: Vikas Publishing House
ISBN: 9788125924098
Category : Science
Languages : en
Pages : 448
Book Description
Engineering Physics has been written keeping in mind the first year engineering students of all branches of various Indian universities. The second edition provides more examples with solution. It also offers university question papers of recent years with model solutions.
Publisher: Vikas Publishing House
ISBN: 9788125924098
Category : Science
Languages : en
Pages : 448
Book Description
Engineering Physics has been written keeping in mind the first year engineering students of all branches of various Indian universities. The second edition provides more examples with solution. It also offers university question papers of recent years with model solutions.