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Author: Gerhard Wachutka Publisher: Springer Science & Business Media ISBN: 3709106249 Category : Technology & Engineering Languages : en Pages : 387
Book Description
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Author: Gerhard Wachutka Publisher: Springer Science & Business Media ISBN: 3709106249 Category : Technology & Engineering Languages : en Pages : 387
Book Description
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Author: Guo Qi Zhang Publisher: Springer Science & Business Media ISBN: 0387755934 Category : Technology & Engineering Languages : en Pages : 338
Book Description
In the past decades, the mainstream of microelectronics progression was mainly powered by Moore's law focusing on IC miniaturization down to nano scale. However, there is a fast increasing need for "More than Moore" (MtM) products and technology that are based upon or derived from silicon technologies, but do not simply scale with Moore’s law. This book provides new vision, strategy and guidance for the future technology and business development of micro/nanoelectronics.
Author: Publisher: World Scientific ISBN: 9812708588 Category : Technology & Engineering Languages : en Pages : 205
Book Description
Annotation. The Proceedings cover five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicongermanium devices, nanoelectronics and ballistic devices, and characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many "first" and break-through results, as has become a tradition with the Lester Eastman Conference and will allow readers to get up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of the state-of-the art and of "hot off the press" results making the book to be required reading for engineers, scientists, and students working on advanced and high speed device technology. Book jacket.
Author: Anatoliy Evtukh Publisher: John Wiley & Sons ISBN: 1119037964 Category : Technology & Engineering Languages : en Pages : 472
Book Description
Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.
Author: Rüdiger Quay Publisher: Springer Science & Business Media ISBN: 3540718923 Category : Technology & Engineering Languages : en Pages : 492
Book Description
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Author: Serge Oktyabrsky Publisher: Springer Science & Business Media ISBN: 1441915478 Category : Technology & Engineering Languages : en Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Gerhard Wachutka
Author: Gerhard Wachutka
Author: Guo Qi Zhang
Author: Materials Research Society. Meeting
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Author: Anatoliy Evtukh
Author: Rüdiger Quay
Author: Serge Oktyabrsky
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