Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1132
Book Description
Nuclear Science Abstracts
Department of Energy fiscal year 2014 justifications
Author: United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development
Publisher:
ISBN:
Category : Federal aid to energy development
Languages : en
Pages : 1428
Book Description
Publisher:
ISBN:
Category : Federal aid to energy development
Languages : en
Pages : 1428
Book Description
Energy and Water Development Appropriations for 2014
Author: United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development
Publisher:
ISBN:
Category : Federal aid to energy development
Languages : en
Pages : 1428
Book Description
Publisher:
ISBN:
Category : Federal aid to energy development
Languages : en
Pages : 1428
Book Description
Energy and Water Development Appropriations for 2013: Dept. of Energy FY 2013 justifications
Author: United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development
Publisher:
ISBN:
Category : Federal aid to energy development
Languages : en
Pages : 1096
Book Description
Publisher:
ISBN:
Category : Federal aid to energy development
Languages : en
Pages : 1096
Book Description
Reactor Technology
Power Reactor Technology and Reactor Fuel Processing
Author:
Publisher:
ISBN:
Category : Nuclear engineering
Languages : en
Pages : 1110
Book Description
Publisher:
ISBN:
Category : Nuclear engineering
Languages : en
Pages : 1110
Book Description
Advances in High Temperature Gas Cooled Reactor Fuel Technology
Author: International Atomic Energy Agency
Publisher:
ISBN: 9789201253101
Category : Business & Economics
Languages : en
Pages : 639
Book Description
This publication reports on the results of a coordinated research project on advances in high temperature gas cooled reactor (HTGR) fuel technology and describes the findings of research activities on coated particle developments. These comprise two specific benchmark exercises with the application of HTGR fuel performance and fission product release codes, which helped compare the quality and validity of the computer models against experimental data. The project participants also examined techniques for fuel characterization and advanced quality assessment/quality control. The key exercise included a round-robin experimental study on the measurements of fuel kernel and particle coating properties of recent Korean, South African and US coated particle productions applying the respective qualification measures of each participating Member State. The summary report documents the results and conclusions achieved by the project and underlines the added value to contemporary knowledge on HTGR fuel.
Publisher:
ISBN: 9789201253101
Category : Business & Economics
Languages : en
Pages : 639
Book Description
This publication reports on the results of a coordinated research project on advances in high temperature gas cooled reactor (HTGR) fuel technology and describes the findings of research activities on coated particle developments. These comprise two specific benchmark exercises with the application of HTGR fuel performance and fission product release codes, which helped compare the quality and validity of the computer models against experimental data. The project participants also examined techniques for fuel characterization and advanced quality assessment/quality control. The key exercise included a round-robin experimental study on the measurements of fuel kernel and particle coating properties of recent Korean, South African and US coated particle productions applying the respective qualification measures of each participating Member State. The summary report documents the results and conclusions achieved by the project and underlines the added value to contemporary knowledge on HTGR fuel.
Nuclear Energy for Hydrogen Production
Author: Karl Verfondern
Publisher: Forschungszentrum Jülich
ISBN: 3893364684
Category : Hydrogen
Languages : en
Pages : 199
Book Description
Publisher: Forschungszentrum Jülich
ISBN: 3893364684
Category : Hydrogen
Languages : en
Pages : 199
Book Description
Reactor Dosimetry
Author: Harry Farrar
Publisher: ASTM International
ISBN: 0803118996
Category : Nuclear reactors
Languages : en
Pages : 854
Book Description
Proceedings of the 8th ASTM-Euratom Symposium, held in Vail, Colorado, Aug.-Sept. 1993, to provide a forum for experts to discuss their latest results under the broad theme of dosimetry for the correlation of radiation effects. Preceded by a summary of the keynote presentations and followed by summa
Publisher: ASTM International
ISBN: 0803118996
Category : Nuclear reactors
Languages : en
Pages : 854
Book Description
Proceedings of the 8th ASTM-Euratom Symposium, held in Vail, Colorado, Aug.-Sept. 1993, to provide a forum for experts to discuss their latest results under the broad theme of dosimetry for the correlation of radiation effects. Preceded by a summary of the keynote presentations and followed by summa
Fundamentals of Silicon Carbide Technology
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565
Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565
Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.