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Ultrafast Time-resolved Characterization of (Cd,Mn)Te Semiconductors as Radiation Detectors

Ultrafast Time-resolved Characterization of (Cd,Mn)Te Semiconductors as Radiation Detectors PDF Author: Allen S. Cross
Publisher:
ISBN:
Category :
Languages : en
Pages : 222

Book Description
"This thesis is devoted to the optical characterization of Cd1-xMnxTe [(Cd,Mn)Te] semiconductor based radiation detectors. In it I present my research on the study of (Cd,Mn)Te single crystal as both a material for detection of high-energy x rays as well as for sub-picosecond voltage sensing. The work includes the practical implementation of (Cd,Mn)Te, its characterization using ultrafast spectroscopy, and comparative measurements to other competitive materials. Characterization of the voltage sensitivity of (Cd,Mn)Te is accomplished using time-resolved spectroscopy and sub-picosecond electro-magnetic pulses. My research shows that the electro-optic (EO) effect of (Cd,Mn)Te is nearly an order of magnitude greater than previously believed, and accomplishes voltage sensitivities for THz signals greater than traditional EO transducers currently available. For measurements of low-frequency signals, the results agree with the unexceptionally low textbook value; however, through various experiments studying the EO dependence on temperature, fabrication technique, and frequency, I show that the culprit for the low sensitivity at low frequency is free-carrier screening. Furthermore, testing the wavelength dependence shows that the sensitivity is enhanced for optical probe energies approaching the crystal bandgap, which in of itself, is tunable in the visible to near infrared spectrum by changing the manganese concentration. Comparative measurements to LiTaO3 are made showing the same sub-picosecond temporal resolution, but significantly greater voltage sensitivity absent of dielectric loading. I further report on the implementation of (Cd,Mn)Te photoconductive devices (PCDs) as the diagnostics x-ray detection tool used for conducting inertial confinement fusion (ICF) experiments in the OMEGA Facility at the University of Rochester's Laboratory for Laser Energetics, and compare the results to those of standard diamond PCDs. I present measurements of the (Cd,Mn)Te PCDs, intended to characterize both the temporal and spectral dependence of x-ray emissions from laser-illuminated targets during ICF experiments. The Cd0.95Mn0.05Te single crystals, doped with vanadium and annealed in Cd vapor, exhibit resistivity of [...characters removed]. A 1-mm-long and 2.3-mm-long detector is placed in the same housing as a 1-mm-long diamond PCD. Each device is preceded by a Be x-ray filter with 37% x-ray transmission at the 1-keV cutoff energy. The energy of the incident OMEGA laser pulses vary from 2.3 kJ to 28 kJ. Using targets of empty plastic shells, we observe two x-ray emission events separated by 1.24 ns: the first event is caused by heating of the shell that created a hot corona, while the second event is an x-ray emission from the fully compressed target. ICF experiments of targets with steel cores enable the analysis of time-resolved relaxation dynamics of photo-excited carriers in the (Cd,Mn)Te crystals. According to my calculations, the (Cd,Mn)Te material can effectively absorb x rays with energies of up to 200 keV. Thus, the (Cd,Mn)Te PCDs are likely to complement the diamond detectors currently used in the laser-confinement fusion experiments."--Leaves v-vi.

Ultrafast Time-resolved Characterization of (Cd,Mn)Te Semiconductors as Radiation Detectors

Ultrafast Time-resolved Characterization of (Cd,Mn)Te Semiconductors as Radiation Detectors PDF Author: Allen S. Cross
Publisher:
ISBN:
Category :
Languages : en
Pages : 222

Book Description
"This thesis is devoted to the optical characterization of Cd1-xMnxTe [(Cd,Mn)Te] semiconductor based radiation detectors. In it I present my research on the study of (Cd,Mn)Te single crystal as both a material for detection of high-energy x rays as well as for sub-picosecond voltage sensing. The work includes the practical implementation of (Cd,Mn)Te, its characterization using ultrafast spectroscopy, and comparative measurements to other competitive materials. Characterization of the voltage sensitivity of (Cd,Mn)Te is accomplished using time-resolved spectroscopy and sub-picosecond electro-magnetic pulses. My research shows that the electro-optic (EO) effect of (Cd,Mn)Te is nearly an order of magnitude greater than previously believed, and accomplishes voltage sensitivities for THz signals greater than traditional EO transducers currently available. For measurements of low-frequency signals, the results agree with the unexceptionally low textbook value; however, through various experiments studying the EO dependence on temperature, fabrication technique, and frequency, I show that the culprit for the low sensitivity at low frequency is free-carrier screening. Furthermore, testing the wavelength dependence shows that the sensitivity is enhanced for optical probe energies approaching the crystal bandgap, which in of itself, is tunable in the visible to near infrared spectrum by changing the manganese concentration. Comparative measurements to LiTaO3 are made showing the same sub-picosecond temporal resolution, but significantly greater voltage sensitivity absent of dielectric loading. I further report on the implementation of (Cd,Mn)Te photoconductive devices (PCDs) as the diagnostics x-ray detection tool used for conducting inertial confinement fusion (ICF) experiments in the OMEGA Facility at the University of Rochester's Laboratory for Laser Energetics, and compare the results to those of standard diamond PCDs. I present measurements of the (Cd,Mn)Te PCDs, intended to characterize both the temporal and spectral dependence of x-ray emissions from laser-illuminated targets during ICF experiments. The Cd0.95Mn0.05Te single crystals, doped with vanadium and annealed in Cd vapor, exhibit resistivity of [...characters removed]. A 1-mm-long and 2.3-mm-long detector is placed in the same housing as a 1-mm-long diamond PCD. Each device is preceded by a Be x-ray filter with 37% x-ray transmission at the 1-keV cutoff energy. The energy of the incident OMEGA laser pulses vary from 2.3 kJ to 28 kJ. Using targets of empty plastic shells, we observe two x-ray emission events separated by 1.24 ns: the first event is caused by heating of the shell that created a hot corona, while the second event is an x-ray emission from the fully compressed target. ICF experiments of targets with steel cores enable the analysis of time-resolved relaxation dynamics of photo-excited carriers in the (Cd,Mn)Te crystals. According to my calculations, the (Cd,Mn)Te material can effectively absorb x rays with energies of up to 200 keV. Thus, the (Cd,Mn)Te PCDs are likely to complement the diamond detectors currently used in the laser-confinement fusion experiments."--Leaves v-vi.

Charge Transport Properties of CdMnTe Radiation Detectors

Charge Transport Properties of CdMnTe Radiation Detectors PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Semiconductor Radiation Detectors

Semiconductor Radiation Detectors PDF Author: Alan Owens
Publisher: CRC Press
ISBN: 1351629174
Category : Science
Languages : en
Pages : 494

Book Description
Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material

Semiconductor Radiation Detectors

Semiconductor Radiation Detectors PDF Author: Salim Reza
Publisher: CRC Press
ISBN: 1351779923
Category : Technology & Engineering
Languages : en
Pages : 290

Book Description
The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

Measurement of Nuclear Radiation with Semiconductor Detectors

Measurement of Nuclear Radiation with Semiconductor Detectors PDF Author: D. N. Poenaru
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 414

Book Description
CONTENTS - MAIN NOTATIONS - CONTENTS - CHAPTER I. - INTERACTION OF THE NUCLEAR RADIATION WITH MATTER - 1.1. Interaction of heavy charged particles with matter - 1.2. Passage of electrons through matter - 1.3. Interaction processes of gamma and X-rays - 1.4. Interaction processes of neutrons - 1.5. Conclusions - CHAPTER II. - FUNDAMENTAL PROCESSES IN SEMICONDUCTORS AND METALS - 2.1. Schrödinger equation. The particle inside the potential well - 2.2. The hydrogen atom - 2.3. Theory of the periodic system of elements - 2.4. Electrons in crystals - 2.5. Effective mass - 2.6. Energy bands - 2.7. Statistical distributions - 2.8. Equilibrium density of charge carriers in semiconductors - 2.9. Transport phenomena - 2.10. Recombination phenomena - 2.11. P-N junction - 2.12. Phenomena at the metal-semiconductor interface - CHAPTER III. - WORKING PRINCIPLES OF NUCLEAR RADIATION SEMICONDUCTOR DETECTORS - 3.1. Charge-carrier injection. The mean energy for electron-hole pair production - 3.2. The drift of charge-carriers in the electric field. The shape of the current and voltage pulse given by the collection of a single pair. - 3.3. Collection time of electron-hole pairs in a P-N abrupt junction - 3.4. Collection time of electron-hole pairs in coaxial Ge (Li) detectors - 3.5. Influence of SD equivalent circuit elements on the voltage and current pulse shape - 3.6. Collection of charge-carriers in real devices - 3.7. Collection of electric charges by diffusion from outside the depletion layer - 3.8. Detector noise - 3.9. Detector energy resolution - CHAPTER IV - CHARACTERISTICS OF SEMICONDUCTOR DETECTORS - 4.1. Electrical characteristics - 4.2. Detection characteristics - 4.3. Effects of temperature, magnetic field and light on the semiconductor detector characteristics - 4.4. Detector sensitivity to neutrons and gamma-rays - 4.5. Effects of radiation damage on detector characteristics - CHAPTER V - SEMICONDUCTOR DETECTOR TYPES - 5.1. Methods for obtaining high electric fields in semiconductors - 5.2. Homogeneous semiconductor detectors - 5.3. Diffused N-P junction detectors - 5.4. Surface-barrier detectors - 5.5. Guard-ring detectors - 5.6. Totally depleted detectors - 5.7. Neutron detectors - 5.8. Special detectors - 5.9. NIP detectors - CHAPTER VI - AMPLIFICATION OF SEMICONDUCTOR DETECTOR ELECTRIC PULSES - 6.1. Electric charge to voltage pulse conversion - 6.2. Charge-sensitive-preamplifier-noise specification and measurement - 6.S. Amplifier-noise sources - 6.4. Effects of amplifier shaping circuits on noise spectra - 6.5. RC-RC amplifier signal to noise ratio - CHAPTER VII - SEMICONDUCTOR DETECTOR ASSOCIATED ELECTRONICS - 7.1. Spectrometers with semiconductor detectors - 7.2. Charge sensitive preamplifiers - 7.3. Main amplifier - 7.4. Amplitude analyser and expander - 7.5. High amplitude stability pulse generator - 7.6. Transistorized apparatus - APPENDIX A I: Basic properties of Si and Ge - APPENDIX A II: Main natural and artificial alpha sources - APPENDIX A III: Analysis of some circuits used in charge sensitive preamplifiers - REFERENCES -

Optical Properties of Semiconductor Nanostructures

Optical Properties of Semiconductor Nanostructures PDF Author: Marcin L. Sadowski
Publisher: Springer Science & Business Media
ISBN: 9780792363163
Category : Science
Languages : en
Pages : 470

Book Description
Optical methods for investigating semiconductors and the theoretical description of optical processes have always been an important part of semiconductor physics. Only the emphasis placed on different materials changes with time. Here, a large number of papers are devoted to quantum dots, presenting the theory, spectroscopic investigation and methods of producing such structures. Another major part of the book reflects the growing interest in diluted semiconductors and II-IV nanosystems in general. There are also discussions of the fascinating field of photonic crystals. `Classical' low dimensional systems, such as GsAs/GaAlAs quantum wells and heterostructures, still make up a significant part of the results presented, and they also serve as model systems for new phenomena. New materials are being sought, and new experimental techniques are coming on stream, in particular the combination of different spectroscopic modalities.

Compound Semiconductor Radiation Detectors

Compound Semiconductor Radiation Detectors PDF Author: Alan Owens
Publisher: Taylor & Francis
ISBN: 1439873135
Category : Science
Languages : en
Pages : 570

Book Description
For many applications, compound semiconductors are now viable competitors to elemental semiconductors because of their wide range of physical properties. This book describes all aspects of radiation detection and measurement using compound semiconductors, including crystal growth, detector fabrication, contacting, and spectroscopic performance (with particular emphasis on the X- and gamma-ray regimes). A concentrated reference for researchers in various disciplines as well as graduate students in specialized courses, the text outlines the potential and limitations of semiconductor detectors.

Chemical Abstracts

Chemical Abstracts PDF Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2692

Book Description


Magnetophotonics

Magnetophotonics PDF Author: Mitsuteru Inoue
Publisher: Springer Science & Business Media
ISBN: 3642355099
Category : Technology & Engineering
Languages : en
Pages : 238

Book Description
This book merges theoretical and experimental works initiated in 1997 from consideration of periodical artificial dielectric structures comprising magneto-optical materials. Modern advances in magnetophotonics are discussed giving theoretical analyses and demonstrations of the consequences of light interaction with non-reciprocal media of various designs. This first collection of foundational works is devoted to light-to-artificial magnetic matter phenomena and related applications. The subject covers the physical background and the continuing research in the field of magnetophotonics.

Low-Dimensional Structures in Semiconductors

Low-Dimensional Structures in Semiconductors PDF Author: A.R. Peaker
Publisher: Springer Science & Business Media
ISBN: 1489906231
Category : Science
Languages : en
Pages : 227

Book Description
This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on 'Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.' This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.' The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The third section covers the crucial issue of interfaces while the final section deals with devices and device physics.