Author: Steven Richard WeinzierlPublisher:
ISBN:
Category :
Languages : en
Pages : 552
Book Description
Two Dimensional Monte Carlo Simulations of Submicron Unipolar and Bipolar Compound Semiconductor Devices with Ballistic Injection Cathodes
Author: Steven Richard WeinzierlPublisher:
ISBN:
Category :
Languages : en
Pages : 552
Book Description
Monte Carlo Simulation of Ultrafast Carrier Dynamics and Optical Interactions in Compound Semiconductor Thin Films and Optical Devices
Author: James E. BairCompound Semiconductor Device Modelling
Author: Christopher M. SnowdenPublisher: Springer Science & Business Media
ISBN: 1447120485
Category : Technology & Engineering
Languages : en
Pages : 295
Book Description
Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
Computational Electronics
Author: Karl HessPublisher: Springer Science & Business Media
ISBN: 1475721242
Category : Technology & Engineering
Languages : en
Pages : 273
Book Description
Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.
Fundamentals of Modern VLSI Devices
Author: Yuan TaurPublisher: Cambridge University Press
ISBN: 9781107635715
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Terahertz Sources and Systems
Author: R.E. MilesPublisher: Springer Science & Business Media
ISBN: 9780792370963
Category : Medical
Languages : en
Pages : 376
Book Description
Proceedings of the NATO Advanced Research Workshop, Château de Bonas, France, 22-27 June 2000
Power GaN Devices
Author: Matteo MeneghiniPublisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Nanotechnology Research Directions: IWGN Workshop Report
Author: R.S. WilliamsPublisher: Springer Science & Business Media
ISBN: 9401595763
Category : Technology & Engineering
Languages : en
Pages : 367
Book Description
energy production, environmental management, transportation, communication, computation, and education. As the twenty-first century unfolds, nanotechnology's impact on the health, wealth, and security of the world's people is expected to be at least as significant as the combined influences in this century of antibiotics, the integrated circuit, and human-made polymers. Dr. Neal Lane, Advisor to the President for Science and Technology and former National Science Foundation (NSF) director, stated at a Congressional hearing in April 1998, "If I were asked for an area of science and engineering that will most likely produce the breakthroughs of tomorrow, I would point to nanoscale science and engineering. " Recognizing this potential, the White House Office of Science and Technology Policy (OSTP) and the Office of Management and Budget (OMB) have issued a joint memorandum to Federal agency heads that identifies nanotechnology as a research priority area for Federal investment in fiscal year 2001. This report charts "Nanotechnology Research Directions," as developed by the Interagency W orking Group on Nano Science, Engineering, and Technology (IWGN) of the National Science and Technology Council (NSTC). The report incorporates the views of leading experts from government, academia, and the private sector. It reflects the consensus reached at an IWGN-sponsored workshop held on January 27-29, 1999, and detailed in contributions submitted thereafter by members of the V. S. science and engineering community. (See Appendix A for a list of contributors.
Two Dimensional Transition Metal Dichalcogenides
Author: Narayanasamy Sabari ArulPublisher: Springer
ISBN: 9811390452
Category : Technology & Engineering
Languages : en
Pages : 361
Book Description
This book presents advanced synthesis techniques adopted to fabricate two-dimensional (2D) transition metal dichalcogenides (TMDs) materials with its enhanced properties towards their utilization in various applications such as, energy storage devices, photovoltaics, electrocatalysis, electronic devices, photocatalysts, sensing and biomedical applications. It provides detailed coverage on everything from the synthesis and properties to the applications and future prospects of research in 2D TMD nanomaterials.
Random Telegraph Signals in Semiconductor Devices
Author: Eddy SimoenPublisher:
ISBN: 9780750312745
Category : SCIENCE
Languages : en
Pages : 0
Book Description
"Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology."--Prové de l'editor.