Time-resolved Photoluminescence Spectroscopy of Semiconductors for Optical Applications Beyond the Visible Spectral Range PDF Download

Author: Alexey Chernikov
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Author: Robert R. Alfano
Publisher: Elsevier
ISBN: 0323145469
Category : Science
Languages : en
Pages : 576

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Book Description
Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume II discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume discusses electronic relaxation in amorphous semiconductors and the physical mechanisms during and after the interaction of an intense laser pulse with a semiconductor. It also covers the relaxation of carriers in semiconductors; transient optical pulse propagation; and methods of time-resolved spectroscopy. Scientists, engineers, and graduate students will find this book invaluable.

Author:
Publisher: Academic Press
ISBN: 0080864333
Category : Technology & Engineering
Languages : en
Pages : 461

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Book Description
Spectroscopic techniques are among the most powerful characterization methods used to study semiconductors. This volume presents reviews of a number of major spectroscopic techniques used to investigate bulk and artificially structured semiconductors including: photoluminescence, photo-reflectance, inelastic light scattering, magneto-optics, ultrafast work, piezo-spectroscopy methods, and spectroscopy at extremely low temperatures and high magnetic fields. Emphasis is given to major semiconductor systems, and artificially structured materials such as GaAs, InSb, Hg1-xCdxTe and MBE grown structures based upon GaAs/AlGaAs materials. Both the spectroscopic novice and the expert will benefit from the descriptions and discussions of the methods, principles, and applications relevant to today's semiconductor structures.Key Features* Discusses the latest advances in spectroscopic techniques used to investigate bulk and artificially structured semiconductors* Features detailed review articles which cover basic principles* Highlights specific applications such as the use of laser spectroscopy for the characterization of GaAs quantum well structures

Author: Sidney Perkowitz
Publisher: Elsevier
ISBN: 0080984274
Category : Technology & Engineering
Languages : en
Pages : 229

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Book Description
This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time.Discusses and compares infrared, Raman, and photoluminescence methodsEnables readers to choose the best method for a given problemIllustrates applications to help non-experts and industrial users, with answers to selected common problemsPresents fundamentals with examples from the semiconductor literature without excessive abstract discussionFeatures equipment lists and discussion of techniques to help establish characterization laboratories

Author: Laura M. Robinson
Publisher:
ISBN:
Category :
Languages : en
Pages :

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We use photoluminescence spectroscopy to investigate the optical properties of two different II-VI semiconductor nanostructure systems: ZnMnSe/ZnSe multiple quantum wells and self-assembled CdSe quantum dots. The behavior of excitons in ZnMnSe quantum wells is examined using polarized magneto-photoluminescence, while (temperature-dependent) time-resolved photoluminescence is used to study the dynamics of excitons confined to quantum dot structures. When Zn0.86Mn0.14Se/ZnSe multiple quantum wells are placed in an external magnetic fields, the spin-down holes become confined to the ZnMnSe "barriers," while the electrons remain in the ZnSe "wells." This spatial separation of electrons and holes results in weak electron-hole overlap, which should result in a large increase of the radiative lifetime of the spin-down exciton. As a result, we see the formation of exciton magnetic polarons (EMP) which lower their energy by spontaneously aligning the magnetic impurities in the exciton Bohr radius. We find that the EMP polarization approaches 100% in fields as small as 200 mT in these spatially indirect EMP, which is consistent with their extremely long recombination lifetime (%7E10 ns). This contrasts with previous measurements on other magnetic quantum well systems for which the polarization of short-lived spatially direct EMP never saturates. Time-resolved photoluminescence measurements of excitons confined to CdSe self-assembled quantum dots (SAQDs) reveal the existence of two different exciton decay times: a short 450 ps lifetime and a much longer (> 4 ns) lifetime. While the emission resulting from the short lifetime excitons persists to room temperatures, the longlifetime component decreases in intensity with increasing temperature and is nearly completely gone by 60 K. Time-resolved spectra further reveal that the long lifetime component arises from spectrally sharp features (%7E200eV), while the rapid decay results from an underlying broad emission (%7E60 meV). Further analysis reveals that both states exhibit an activated behavior with activation energies that differ by over an order of magnitude for the two components. These interesting differences may reflect the complex nature of the electron and hole wave functions confined to these CdSe structures.

Author: R. R. Alfano
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 584

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Book Description
Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume II discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume discusses electronic relaxation in amorphous semiconductors and the physical mechanisms during and after the interaction of an intense laser pulse with a semiconductor. It also covers the relaxation of carriers in semiconductors; transient optical pulse propagation; and methods of tim ...

Author: Jagdeep Shah
Publisher: Springer Science & Business Media
ISBN:
Category : Science
Languages : en
Pages : 400

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Book Description
Ultrafast spectroscopy of semiconductors is an exciting area of research in condensed matter physics. This book presents some recent advances in the field, discussing the physics of relaxation processes following the excitation of a semiconductor by femtosecond laser pulses.

Author: Stephen G Schulman
Publisher: Elsevier
ISBN: 1483160998
Category : Science
Languages : en
Pages : 299

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Book Description
Fluorescence and Phosphorescence Spectroscopy: Physicochemical Principles and Practice deals with the physicochemical principles and applications of fluorescence and phosphorescence spectroscopy in experimental biology and chemistry. Topics covered include the absorption of light by molecules; instrumentation for the measurement of fluorescence and phosphorescence; solvent and acidity effects on electronic spectra; and polarization of fluorescence and phosphorescence. Comprised of four chapters, this book begins with a discussion on photophysical processes in isolated molecules and molecules in solution, paying particular attention to thermal equilibration of electronically excited molecules, phototautomerism, and coordination by metal ions. The next chapter describes the instrumentation for measuring fluorescence and phosphorescence, which consists essentially of a light source to electronically excite the sample; a monochromator to separate the light of desired energy from the source; a sample compartment; a second monochromator to isolate the sample's fluorescence energy from the excitation energy; a photodetector to translate the fluorescent light into an electrical signal; and a readout system such as a galvanometer or a recorder, coupled with an amplifier to determine the intensity of fluorescent light that is emitted. The final chapter is devoted to various applications of fluorescence and phosphorescence spectroscopy, including the analysis of organic and inorganic compounds. This monograph is written primarily for analytical chemists and biological scientists.

Author:
Publisher:
ISBN:
Category : Infrared spectroscopy
Languages : en
Pages : 6

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We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to analyze TRPL data for CdS/CdTe absorbers by considering laser light absorption depth and intermixing at CdS/CdTe interface.

Author: R. R. Alfano
Publisher:
ISBN:
Category :
Languages : en
Pages : 10

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Book Description
We report on the research performed during the period 1982-1983 under the auspices of AFOSR. The research effort follows two directions: (1) laser development: subpicosecond laser, application of anti-resonant cavity to Nd:glass, study of the emerald laser, and study of a new mode-locking dye for shorter pulses. (2) Time-resolved fluorescence and absorption studies of CdCr2Se4, GaAs and Ga(0,5)In(0.5)P with the goal to understand the interaction and kinetics of photogenerated carriers and basic assignments of the valence-conduction band transitions (CdCr2Se4). We have also investigated the dynamics of semi-insulating CdSe. Finally we have continued the research on radiation damage (neutrons and protons) in CdSe and GaAs. (Author).