Thermal Expansion and Thermal Expansion Anisotropy of the 3C, 4H, and 6H Polytypes of Silicon Carbide PDF Download

Author: Zhuang Li
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 200

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Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313550
Category : Technology & Engineering
Languages : en
Pages : 565

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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1461573912
Category : Science
Languages : en
Pages : 386

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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thougtit that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 31 (thesis year 1986) a total of 11 ,480 theses titles trom 24 Canadian and 182 United States universities. We are sure that this broader base tor these titles reported will greatly enhance the value ot this important annual reterence work. While Volume 31 reports theses submitted in 1986, on occasion, certain univer sities do re port theses submitted in previousyears but not reported at the time.

Author: Carl-Mikael Zetterling
Publisher: IET
ISBN: 9780852969984
Category : Technology & Engineering
Languages : en
Pages : 202

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Book Description
This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.

Author: Robert Perret
Publisher: John Wiley & Sons
ISBN: 1118623207
Category : Technology & Engineering
Languages : en
Pages : 381

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Book Description
This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Author: I. D. Peggs
Publisher: Springer Science & Business Media
ISBN: 1461590868
Category : Science
Languages : en
Pages : 289

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Book Description
This 6th International Symposium on Thermal Expansion, the first outside the USA, was held on August 29-31, 1977 at the Gull Harbour Resort on Hecla Island, Manitoba, Canada. Symposium Chairman was Ian D. Peggs, Atomic Energy of Canada Limited, and our continuing sponsor was CINDAS/Purdue University. We made considerable efforts to broaden the base this year to include more users of expansion data but with little success. We were successful, however, in establishing a session on liquids, an area which is receiving more attention as a logical extension to the high-speed thermophysical property measurements on materials at temperatures close to their melting points. The Symposium had good international representation but the overall attendance was, disappointingly, relatively low. Neverthe less, this enhanced the informal atmosphere throughout the meeting with a resultant frank exchange of information and ideas which all attendees appreciated. A totally new item this year was the presentation of a bursary to assist an outstanding research student to attend the Symposium. We were delighted to welcome Mr. Benedick Fraass from the Univer sity of Illinois to the Symposium, and he responded by making an informal presentation on the topic of his research. We hope this feature will continue. Previous Symposia in the series were: DATE SPONSOR LOCATION CHAIRMEN September 18-20 Gaithersburg, R.K. Kirby Natl. Bureau of 1968 Maryland Standards P.S. Gaal Westinghouse Astronuclear Lab. June 10-12 Santa Fe, R.O. Simmons Materials Res. Lab.

Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 920

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Author: Norbert Schulze
Publisher:
ISBN: 9783826592102
Category :
Languages : en
Pages : 121

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Author: Robert Joseph Corruccini
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 34

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Book Description

Author: Cho Yen Ho
Publisher: ASM International
ISBN: 9781615032150
Category : Science
Languages : en
Pages : 330

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Book Description
Provides a detailed examination of theory and techniques in thermal expansion of solids. Subjects include a generalized theory, estimation techniques and selected effects, temperature measurements in solids, thermal expansion by X-ray diffraction, high sensitivity expansivity measurement techniques,