Dissertation Abstracts International PDF Download

Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 942

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Author: Detlef Heitmann
Publisher:
ISBN: 9783642105548
Category :
Languages : en
Pages :

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Book Description
Semiconductor nanostructures are ideal systems to tailor the physical properties via quantum effects, utilizing special growth techniques, self-assembling, wet chemical processes or lithographic tools in combination with tuneable external electric and magnetic fields. Such systems are called "Quantum Materials".The electronic, photonic, and phononic properties of these systems are governed by size quantization and discrete energy levels. The charging is controlled by the Coulomb blockade. The spin can be manipulated by the geometrical structure, external gates and by integrating hybrid ferromagnetic emitters.This book reviews sophisticated preparation methods for quantum materials based on III-V and II-VI semiconductors and a wide variety of experimental techniques for the investigation of these interesting systems. It highlights selected experiments and theoretical concepts and gives such a state-of-the-art overview about the wide field of physics and chemistry that can be studied in these systems.

Author: Thomas Ihn
Publisher: Oxford University Press
ISBN: 019953442X
Category : Language Arts & Disciplines
Languages : en
Pages : 569

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Book Description
This introduction to the physics of semiconductor nanostructures and their transport properties emphasizes five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect and the Coulomb blockade effect.

Author: Giovanni Agostini
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501

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Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Author: A. B. Pippard
Publisher: Cambridge University Press
ISBN: 0521326605
Category : Science
Languages : en
Pages : 270

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Book Description
First published in 1989, this book contained the first systematic account of magnetoresistance in metals, the study of which has provided solid-state physicists with much valuable information about electron motion in metals. The electrical resistance of a metal is usually changed when a magnetic field is applied to it; at low temperatures the change may be very large indeed and when magnetic breakdown is involved, very complex. Every metal behaves differently, and the effect is highly dependent on the direction of the field relative to the crystal axes. Quite apart from its usefulness for determining the Ferni surfaces of individual metals, the phenomenon presents many interesting problems in its own right; it is the phenomenon, rather than its applications, that Professor Pippard concentrates on in this book. The level of treatment is aimed at readers with a basic knowledge of undergraduate solid-state physics, and makes no great demand on mathematical ability. The text is copiously illustrated with real experimental results.

Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816

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Author: A.V. Narlikar
Publisher: Oxford University Press
ISBN: 0199533059
Category : Language Arts & Disciplines
Languages : en
Pages : 957

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Book Description
These three volumes are intended to shape the field of nanoscience and technology and will serve as an essential point of reference for cutting-edge research in the field.

Author: D.D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 366205003X
Category : Technology & Engineering
Languages : en
Pages : 321

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Book Description
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.

Author: Vladimir M. Fomin
Publisher: Springer Science & Business Media
ISBN: 3642391974
Category : Science
Languages : en
Pages : 498

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Book Description
This book deals with a new class of materials, quantum rings. Innovative recent advances in experimental and theoretical physics of quantum rings are based on the most advanced state-of-the-art fabrication and characterization techniques as well as theoretical methods. The experimental efforts allow to obtain a new class of semiconductor quantum rings formed by capping self-organized quantum dots grown by molecular beam epitaxy. Novel optical and magnetic properties of quantum rings are associated with non-trivial topologies at the nanoscale. An adequate characterization of quantum rings is possible on the basis of modern characterization methods of nanostructures, such as Scanning Tunneling Microscopy. A high level of complexity is demonstrated to be needed for a dedicated theoretical model to adequately represent the specific features of quantum rings. The findings presented in this book contribute to develop low-cost high-performance electronic, spintronic, optoelectronic and information processing devices based on quantum rings.

Author: Paul Harrison
Publisher: John Wiley & Sons
ISBN: 0470010819
Category : Science
Languages : en
Pages : 511

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Book Description
Quantum Wells, Wires and Dots Second Edition: Theoretical andComputational Physics of Semiconductor Nanostructures providesall the essential information, both theoretical and computational,for complete beginners to develop an understanding of how theelectronic, optical and transport properties of quantum wells,wires and dots are calculated. Readers are lead through a series ofsimple theoretical and computational examples giving solidfoundations from which they will gain the confidence to initiatetheoretical investigations or explanations of their own. Emphasis on combining the analysis and interpretation ofexperimental data with the development of theoretical ideas Complementary to the more standard texts Aimed at the physics community at large, rather than just thelow-dimensional semiconductor expert The text present solutions for a large number of realsituations Presented in a lucid style with easy to follow steps related toaccompanying illustrative examples