The Structure and Physical Properties of Microcrystalline Silicon Germanium Alloys and Intrinsic Microcrystalline Silicon Thin Films by Reactive Magnetron Sputtering

The Structure and Physical Properties of Microcrystalline Silicon Germanium Alloys and Intrinsic Microcrystalline Silicon Thin Films by Reactive Magnetron Sputtering PDF Author: Seon-Mee Cho
Publisher:
ISBN:
Category :
Languages : en
Pages : 488

Book Description


Physical Properties of HWCVD Microcrystalline Silicon Thin Films

Physical Properties of HWCVD Microcrystalline Silicon Thin Films PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 7

Book Description
This conference paper describes Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.

Silicon, Germanium, and Their Alloys

Silicon, Germanium, and Their Alloys PDF Author: Gudrun Kissinger
Publisher: CRC Press
ISBN: 1466586648
Category : Science
Languages : en
Pages : 436

Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Physics Briefs

Physics Briefs PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1248

Book Description


Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304

Book Description


Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering

Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering PDF Author: Renjie Wang
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages :

Book Description
High mobility single-crystalline-like Ge thin films have been demonstrated on inexpensive polycrystalline metallic substrates buffered with oxide buffer layer. Doped films of p-type and n-type were fabricated using radio frequency magnetron sputtering on flexible epitaxial templates produced by ion beam assisted deposition (IBAD). Ideal conditions for fabricating p-type and n-type Ge thin films have been optimized based on their structure and Hall mobility. As defect density in Ge is directly related to the CeO2 buffer, the effect of CeO2 layer thickness and quality has been evaluated. A structural design of a p-i-n junction is proposed for solar cells on our flexible substrate based on electrical and crystal properties of Si and Ge thin films fabricated. In order to achieve an efficient harvesting of photo-generated free carriers, fabrication of substrates terminated with epitaxial conductive layers is studied.

Thin-Film Silicon Solar Cells

Thin-Film Silicon Solar Cells PDF Author: Arvind Victor Shah
Publisher: CRC Press
ISBN: 1439808104
Category : Science
Languages : en
Pages : 438

Book Description
Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, startin

Advanced Strategies in Thin Film Engineering by Magnetron Sputtering

Advanced Strategies in Thin Film Engineering by Magnetron Sputtering PDF Author: Alberto Palmero
Publisher: MDPI
ISBN: 3039364294
Category : Science
Languages : en
Pages : 148

Book Description
Recent years have witnessed the flourishing of numerous novel strategies based on the magnetron sputtering technique aimed at the advanced engineering of thin films, such as HiPIMS, combined vacuum processes, the implementation of complex precursor gases or the inclusion of particle guns in the reactor, among others. At the forefront of these approaches, investigations focused on nanostructured coatings appear today as one of the priorities in many scientific and technological communities: The science behind them appears in most of the cases as a "terra incognita", fascinating both the fundamentalist, who imagines new concepts, and the experimenter, who is able to create and study new films with as of yet unprecedented performances. These scientific and technological challenges, along with the existence of numerous scientific issues that have yet to be clarified in classical magnetron sputtering depositions (e.g., process control and stability, nanostructuration mechanisms, connection between film morphology and properties or upscaling procedures from the laboratory to industrial scales) have motivated us to edit a specialized volume containing the state-of-the art that put together these innovative fundamental and applied research topics. These include, but are not limited to: • Nanostructure-related properties; • Atomistic processes during film growth; • Process control, process stability, and in situ diagnostics; • Fundamentals and applications of HiPIMS; • Thin film nanostructuration phenomena; • Tribological, anticorrosion, and mechanical properties; • Combined procedures based on the magnetron sputtering technique; • Industrial applications; • Devices.

Phase Transformation and Properties of Magnetron Co-Sputtered Gesi Thin Films

Phase Transformation and Properties of Magnetron Co-Sputtered Gesi Thin Films PDF Author: Ziwen Xu
Publisher: Open Dissertation Press
ISBN: 9781374662131
Category :
Languages : en
Pages :

Book Description
This dissertation, "Phase Transformation and Properties of Magnetron Co-sputtered GeSi Thin Films" by Ziwen, Xu, 徐子文, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3984877 Subjects: Sputtering (Physics) Thin films Germanium Silicon Magnetrons

Properties of Silicon Germanium and SiGe:Carbon

Properties of Silicon Germanium and SiGe:Carbon PDF Author: Erich Kasper
Publisher: Inst of Engineering & Technology
ISBN: 9780852967836
Category : Technology & Engineering
Languages : en
Pages : 358

Book Description
The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.