Author: Xidong ChenPublisher:
ISBN:
Category :
Languages : en
Pages : 220
Book Description
The Si/Sio2 Interface Roughness
Author: Xidong ChenSi/SiO2 Interface Roughness Studies
Author: Wing Ling Liliean LaiPublisher:
ISBN:
Category : Atomic force microscopy
Languages : en
Pages : 502
Book Description
Low Temperature Measurement of Si/SiO2 Interface Roughness and Interface Trapped Charge in Metal-oxide-semiconductor Devices
Author: Warren Robert AndersonThe Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996
Author: Hisham Z. MassoudPublisher:
ISBN:
Category : Science
Languages : en
Pages : 804
Book Description
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000
Author: Hisham Z. MassoudPublisher:
ISBN:
Category : Nature
Languages : en
Pages : 562
Book Description
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Author: B.E. DealPublisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Author: B.E. DealPublisher: Springer Science & Business Media
ISBN: 1489907742
Category : Science
Languages : en
Pages : 543
Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Influence of Oxidation Parameters on Roughness at the Si-SiO2 Interface
Author: M. HenzlerPublisher:
ISBN:
Category :
Languages : en
Pages : 48
Book Description
The roughness at the interface Si-SiO2 has been determined on an atomic scale after removal of the oxide by LEED (Low Energy Electron Diffraction). The energy dependent broadening of the diffracted electron beams yields the average size of step free terraces. Silicon (111) samples have been oxidized under various conditions concerning atmosphere (dry and wet oxygen), temperature (800 C and 1000 C), time pretreatment and posttreatment. The oxidation process produces a roughness, which may be decreased by low oxidation rates and appropriate annealing in non-oxidizing atmosphere. The novel technique of evaluation for the first time shows systematically, how oxidation parameters determine the roughness at the interface, which again is important for the performance of MOS-devices. (Author).
A Study of Si/SiO2 Interface Roughness Evolution During Microwave Electron Cyclotron Resonance Plasma and Thermal Oxidation Processes
Author: Changyi ZhaoPublisher:
ISBN:
Category : Cyclotron resonance
Languages : en
Pages : 388
Book Description
Correlation of Atomic Roughness and Electronic Properties at the Si/SiO2- Interface
Author: M. HenzlerPublisher:
ISBN:
Category :
Languages : en
Pages : 33
Book Description
Investigation of steps and other defects at the Si/SiO2 interface by spot profile analysis of LEED. Development of improved defect analysis by use of high resolution LEED systems. Search for correlations of defects with electronic properties of MOS-devices by measurement of defects and electrical properties on the same wafers. The development of the evaluation procedure makes use of a high precision measurement at many different energies: since the spot profile can be separated in a central spike, two Lorentzian type shoulders and a constant background (which is not of interest here), the fraction of the contributions yields valuable informations: The central spike provides the vertical distribution (number of surface levels, distribution over the layers) the shoulders are used to derive the lateral width distribution of terraces and defect areas separately. Keywords: Interface, Defects, MOS devices, Atomic steps, Interface electrical breakdown, Correlation of defects, Electric properties, Silicon, Silicon dioxide. (mjm).