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Author: Tero T. Heikkilä Publisher: OUP Oxford ISBN: 0191654469 Category : Science Languages : en Pages : 296
Book Description
Advances in nanotechnology have allowed physicists and engineers to miniaturize electronic structures to the limit where finite-size related phenomena start to impact their properties. This book discusses such phenomena and models made for their description. The book starts from the semiclassical description of nonequilibrium effects, details the scattering theory used for quantum transport calculations, and explains the main interference effects. It also describes how to treat fluctuations and correlations, how interactions affect transport through small islands, and how superconductivity modifies these effects. The last two chapters describe new emerging fields related with graphene and nanoelectromechanics. The focus of the book is on the phenomena rather than formalism, but the book still explains in detail the main models constructed for these phenomena. It also introduces a number of electronic devices, including the single-electron transistor, the superconducting tunnel junction refrigerator, and the superconducting quantum bit.
Author: Tero T. Heikkilä Publisher: OUP Oxford ISBN: 0191654469 Category : Science Languages : en Pages : 296
Book Description
Advances in nanotechnology have allowed physicists and engineers to miniaturize electronic structures to the limit where finite-size related phenomena start to impact their properties. This book discusses such phenomena and models made for their description. The book starts from the semiclassical description of nonequilibrium effects, details the scattering theory used for quantum transport calculations, and explains the main interference effects. It also describes how to treat fluctuations and correlations, how interactions affect transport through small islands, and how superconductivity modifies these effects. The last two chapters describe new emerging fields related with graphene and nanoelectromechanics. The focus of the book is on the phenomena rather than formalism, but the book still explains in detail the main models constructed for these phenomena. It also introduces a number of electronic devices, including the single-electron transistor, the superconducting tunnel junction refrigerator, and the superconducting quantum bit.
Author: Seng Ghee Tan Publisher: Elsevier ISBN: 0857095889 Category : Technology & Engineering Languages : en Pages : 308
Book Description
This book provides an introduction to the physics of nanoelectronics, with a focus on the theoretical aspects of nanoscale devices. The book begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics, to facilitate the understanding of subsequent chapters. It goes on to encompass quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices.Theoretical methodology is developed using quantum mechanical and non-equilibrium Green's function (NEGF) techniques to calculate electronic currents and elucidate their transport properties at the atomic scale. The spin Hall effect is explained and its application to the emerging field of spintronics – where an electron's spin as well as its charge is utilised – is discussed. Topological dynamics and gauge potential are introduced with the relevant mathematics, and their application in nanoelectronic systems is explained. Graphene, one of the most promising carbon-based nanostructures for nanoelectronics, is also explored. - Begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics - Encompasses quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices - Comprehensively introduces topological dynamics and gauge potential with the relevant mathematics, and extensively discusses their application in nanoelectronic systems
Author: Antonio Maffucci Publisher: Springer ISBN: 9401774781 Category : Science Languages : en Pages : 292
Book Description
This book presents the most relevant and recent results in the study of “Nanoelectromagnetics”, a recently born fascinating research discipline, whose popularity is fast arising with the intensive penetration of nanotechnology in the world of electronics applications. Studying nanoelectromagnetics means describing the interaction between electromagnetic radiation and quantum mechanical low-dimensional systems: this requires a full interdisciplinary approach, the reason why this book hosts contributions from the fields of fundamental and applied electromagnetics, of chemistry and technology of nanostructures and nanocomposites, of physics of nano-structures systems, etc. The book is aimed at providing the reader with the state of the art in Nanoelectromagnetics, from theoretical modelling to experimental characterization, from design to synthesis, from DC to microwave and terahertz applications, from the study of fundamental material properties to the analysis of complex systems and devices, from commercial thin-film coatings to metamaterials to circuit components and nanodevices. The book is intended as a reference in advanced courses for graduate students and as a guide for researchers and industrial professionals involved in nanoelectronics and nanophotonics applications.
Author: Vinod Kumar Khanna Publisher: CRC Press ISBN: 1351204653 Category : Science Languages : en Pages : 753
Book Description
This introductory text develops the reader’s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots, quantum wires, and quantum wells together with Landauer-Büttiker formalism and non-equilibrium Green’s function approach. The coverage encompasses nanofabrication techniques and characterization tools followed by a comprehensive exposition of nanoelectronic devices including resonant tunneling diodes, nanoscale MOSFETs, carbon nanotube FETs, high-electron-mobility transistors, single-electron transistors, and heterostructure optoelectronic devices. The writing throughout is simple and straightforward, with clearly drawn illustrations and extensive self-study exercises for each chapter. Introduces the basic concepts underlying the operation of nanoelectronic devices. Offers a broad overview of the field, including state-of-the-art developments. Covers the relevant quantum and solid-state physics and nanoelectronic device principles. Written in lucid language with accessible mathematical treatment. Includes extensive end-of-chapter exercises and many insightful diagrams.
Author: Joachim Knoch Publisher: Walter de Gruyter GmbH & Co KG ISBN: 3110575558 Category : Science Languages : en Pages : 475
Book Description
The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
Author: Hassan Raza Publisher: Springer Nature ISBN: 3030325733 Category : Science Languages : en Pages : 279
Book Description
This book covers the state of the art in the theoretical framework, computational modeling, and the fabrication and characterization of nanoelectronics devices. It addresses material properties, device physics, circuit analysis, system design, and a range of applications. A discussion on the nanoscale fabrication, characterization and metrology is also included. The book offers a valuable resource for researchers, graduate students, and senior undergraduate students in engineering and natural sciences, who are interested in exploring nanoelectronics from materials, devices, systems, and applications perspectives.
Author: Michel Houssa Publisher: CRC Press ISBN: 1498704182 Category : Science Languages : en Pages : 472
Book Description
Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Compris
Author: Raphael Tsu Publisher: Elsevier ISBN: 0080968147 Category : Technology & Engineering Languages : en Pages : 346
Book Description
Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials
Author: Razali Ismail Publisher: CRC Press ISBN: 1351833073 Category : Science Languages : en Pages : 459
Book Description
While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.
Author: Tero T. Heikkilä
Author: Tero T. Heikkilä
Author: Seng Ghee Tan
Author: Vladimir V. Mitin
Author: Antonio Maffucci
Author: Vinod Kumar Khanna
Author: Joachim Knoch
Author: Hassan Raza
Author: Michel Houssa
Author: Raphael Tsu
Author: Razali Ismail