Author: Hisham Z. MassoudPublisher:
ISBN:
Category : Science
Languages : en
Pages : 804
Book Description
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996
Author: Hisham Z. MassoudPublisher:
ISBN:
Category : Science
Languages : en
Pages : 804
Book Description
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Author: B.E. DealPublisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Author: B.E. DealPublisher: Springer Science & Business Media
ISBN: 1489907742
Category : Science
Languages : en
Pages : 543
Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000
Author: Hisham Z. MassoudPublisher:
ISBN:
Category : Nature
Languages : en
Pages : 562
Book Description
The Physics and Chemistry of Sio2 and the Si-Sio2 Interface
Author: B. E. DealPublisher:
ISBN: 9781489907752
Category :
Languages : en
Pages : 572
Book Description
Silicon Nitride and Silicon Dioxide Thin Insulating Films
Author: M. Jamal DeenPublisher: The Electrochemical Society
ISBN: 9781566771375
Category : Science
Languages : en
Pages : 610
Book Description
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5
Author: Hisham Z. MassoudPublisher: ECS Transactions
ISBN: 9781566774307
Category : Dielectrics
Languages : en
Pages : 304
Book Description
This issue of ECS Transactions places a focus on ultrathin gate dielectrics: novel technologies, characterization methods, process modeling, fundamental limits, and projections for scaling the gate oxide thickness.
Physics and Chemistry at Oxide Surfaces
Author: Claudine NogueraPublisher: Cambridge University Press
ISBN: 0521472148
Category : Science
Languages : en
Pages : 243
Book Description
The first chapter of the book summarizes classical approaches, introduces the concept of ionicity, and describes the mixed iono-covalent character of the oxygen cation bond in bulk materials. The next three chapters focus on the characteristics of the atomic structure (relaxation, rumpling and reconstruction effects), the electronic structure (band width, gap width, etc.) and the excitations of clean surfaces.
Fundamental Aspects of Silicon Oxidation
Author: Yves J. ChabalPublisher: Springer Science & Business Media
ISBN: 3642567118
Category : Technology & Engineering
Languages : en
Pages : 269
Book Description
Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Author: Peter PichlerPublisher: Springer Science & Business Media
ISBN: 3709105978
Category : Technology & Engineering
Languages : en
Pages : 576
Book Description
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.