Author: O. Kononchuk Publisher: Elsevier ISBN: 0857099256 Category : Technology & Engineering Languages : en Pages : 503
Book Description
Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. - Covers SOI transistors and circuits, as well as manufacturing processes and reliability - Looks at applications such as memory, power devices, and photonics
Author: Iraj Sadegh Amiri Publisher: Springer ISBN: 3030045137 Category : Technology & Engineering Languages : en Pages : 125
Book Description
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Author: Mitiko Miura-Mattausch Publisher: World Scientific ISBN: 9812812059 Category : Technology & Engineering Languages : en Pages : 381
Book Description
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Author: Publisher: ScholarlyEditions ISBN: 1464963371 Category : Science Languages : en Pages : 3912
Book Description
Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Author: Dimitris Tsoukalas Publisher: Springer Science & Business Media ISBN: 3709162440 Category : Technology & Engineering Languages : en Pages : 463
Book Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Author: Carlos Galup-Montoro Publisher: World Scientific ISBN: 9812568107 Category : Technology & Engineering Languages : en Pages : 445
Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: S. Hall Publisher: Springer Science & Business Media ISBN: 1402063784 Category : Technology & Engineering Languages : en Pages : 377
Book Description
This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Author: Snehashish Chakraverty Publisher: John Wiley & Sons ISBN: 1119423422 Category : Mathematics Languages : en Pages : 256
Book Description
Examines numerical and semi-analytical methods for differential equations that can be used for solving practical ODEs and PDEs This student-friendly book deals with various approaches for solving differential equations numerically or semi-analytically depending on the type of equations and offers simple example problems to help readers along. Featuring both traditional and recent methods, Advanced Numerical and Semi Analytical Methods for Differential Equations begins with a review of basic numerical methods. It then looks at Laplace, Fourier, and weighted residual methods for solving differential equations. A new challenging method of Boundary Characteristics Orthogonal Polynomials (BCOPs) is introduced next. The book then discusses Finite Difference Method (FDM), Finite Element Method (FEM), Finite Volume Method (FVM), and Boundary Element Method (BEM). Following that, analytical/semi analytic methods like Akbari Ganji's Method (AGM) and Exp-function are used to solve nonlinear differential equations. Nonlinear differential equations using semi-analytical methods are also addressed, namely Adomian Decomposition Method (ADM), Homotopy Perturbation Method (HPM), Variational Iteration Method (VIM), and Homotopy Analysis Method (HAM). Other topics covered include: emerging areas of research related to the solution of differential equations based on differential quadrature and wavelet approach; combined and hybrid methods for solving differential equations; as well as an overview of fractal differential equations. Further, uncertainty in term of intervals and fuzzy numbers have also been included, along with the interval finite element method. This book: Discusses various methods for solving linear and nonlinear ODEs and PDEs Covers basic numerical techniques for solving differential equations along with various discretization methods Investigates nonlinear differential equations using semi-analytical methods Examines differential equations in an uncertain environment Includes a new scenario in which uncertainty (in term of intervals and fuzzy numbers) has been included in differential equations Contains solved example problems, as well as some unsolved problems for self-validation of the topics covered Advanced Numerical and Semi Analytical Methods for Differential Equations is an excellent text for graduate as well as post graduate students and researchers studying various methods for solving differential equations, numerically and semi-analytically.
Author: Dawei Zheng Publisher: CRC Press ISBN: 1315752158 Category : Science Languages : en Pages : 526
Book Description
This proceedings volume contains selected papers presented at the 2014 International Conference on Control, Mechatronics and Automation Technology (ICCMAT 2014), held July 24-25, 2014 in Beijing, China. The objective of ICCMAT 2014 is to provide a platform for researchers, engineers, academicians as well as industrial professionals from all over th
Author: Arokia Nathan Publisher: John Wiley & Sons ISBN: 1394202466 Category : Technology & Engineering Languages : en Pages : 469
Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author: O. Kononchuk
Author: Iraj Sadegh Amiri
Author: Mitiko Miura-Mattausch
Author: 
Author: Dimitris Tsoukalas
Author: Carlos Galup-Montoro
Author: S. Hall
Author: Snehashish Chakraverty
Author: Dawei Zheng
Author: Arokia Nathan