Author: Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
Book Description
The Growth of Homo-epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition
Author: Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
Book Description
The Growth of Homo-epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition
Author: Jack H. ThiesenPublisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 11
Book Description
Low-temperature Epitaxial Silicon Using Hot Wire Chemical Vapor Deposition
Author: Jack H. ThiesenPublisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 418
Book Description
Epitaxial Growth of Silicon on Poly-crystalline Si Seed Layer at Low Temperature by Using Hot Wire Chemical Vapor Deposition
Author: Manal Abdullah AldawsariPublisher:
ISBN: 9781321697520
Category : Chemical vapor deposition
Languages : en
Pages : 232
Book Description
Crystallinity quality is a significant factor toward confirming the epitaxial layer. Raman scattering, X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), and Transmission Electron Microscope (TEM) were used to determine the crystallinity. Epitaxial growth of Si at 500 °C was obtained even with a low vacuum of 1x10-3 torr.
Low temperature growth of polycrystalline silicon by hot wire chemical vapor deposition
Author: Torsten BistritschanPublisher:
ISBN:
Category :
Languages : de
Pages : 112
Book Description
The Use of Electron Channeling Patterns for Process Optimization of Low-temperature Epitaxial Silicon Using Hot-wire Chemical Vapor Deposition
Author: Richard J. MatsonPublisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 6
Book Description
The Use of Electron Channeling Patterns for Process Optimization of Low-temperature Epitaxial Silicon Using Hot-wire Chemical Vapor Deposition
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
The authors demonstrate the first reported use of electron channeling patterns (ECPs) as a response for a statistical design of experiments process-optimization for epitaxial silicon. In an effort to fully characterize the new hot-wire chemical vapor deposition (HWCVD) method of epitaxial growth recently discovered at NREL, a large number of parameters with widely varying values needed to be considered. To accomplish this, they used the statistical design of experiments method. This technique allows one to limit the number of sample points necessary to evaluate a given parameter space. In this work they demonstrate how ECPs can effectively be used to optimize the process space as well as to quickly and economically provide the process engineer with absolutely key information.
Catalytic Chemical Vapor Deposition
Author: Hideki MatsumuraPublisher: John Wiley & Sons
ISBN: 352734523X
Category : Technology & Engineering
Languages : en
Pages : 438
Book Description
The authoritative reference on catalytic chemical vapor deposition, written by the inventor of the technology. This comprehensive book covers a wide scope of Cat-CVD and related technologies from the fundamentals to the many applications, including the design of a Cat-CVD apparatus. Featuring contributions from four senior leaders in the field, including the father of catalytic chemical vapor deposition, it also introduces some of the techniques used in the observation of Cat-CVD related phenomena so that readers can understand the concepts of such techniques. Catalytic Chemical Vapor Deposition: Technology and Applications of Cat-CVD begins by reviewing the analytical tools for elucidating the chemical reactions in Cat-CVD, such as laser-induced fluorescence and deep ultra-violet absorption, and explains in detail the underlying physics and chemistry of the Cat-CVD technology. Subsequently it provides an overview of the synthesis and properties of Cat-CVD-prepared inorganic and organic thin films. The last parts of this unique book are devoted to the design and operation of Cat-CVD apparatuses and the applications. Provides coherent coverage of the fundamentals and applications of catalytic chemical vapor deposition (Cat-CVD) Assembles in one place the state of the art of this rapidly growing field, allowing new researchers to get an overview that is difficult to obtain solely from journal articles Presents comparisons of different Cat-CVD methods which are usually not found in research papers Bridges academic and industrial research, showing how CVD can be scaled up from the lab to large-scale industrial utilization in the high-tech industry. Catalytic Chemical Vapor Deposition: Technology and Applications is an excellent one-stop resource for researchers and engineers working on or entering the field of Cat-CVD, Hot-Wire CVD, iCVD, and related technologies.
Low-temperature Plasma-deposited Silicon Epitaxial Films
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.
Author: Jen-Chung Lou