Author: Ga-Lane ChenPublisher:
ISBN:
Category :
Languages : en
Pages : 504
Book Description
The Formation, Characterization, and Application of Sputtered Aluminum Oxide and Gamma-iron Oxide Thin Films
Author: Ga-Lane ChenThe Formation, Characterization, and Application of Sputtered Al203 and Gamma-Fe202 Thin Films
Author: Ga-Lane ChenThe Formation and Characterization of RF Reactively Sputtered Iron Oxide Thin Films as Magnetic Recording Media
Author: Jong-Kai LinMetal Oxide-Based Thin Film Structures
Author: Nini PrydsPublisher:
ISBN: 9780128104187
Category :
Languages : en
Pages : 562
Book Description
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 740
Book Description
Structural Characterization of Aluminum Oxide Thin Films Using Solid-state NMR
Author: Yvonne AfriyiePublisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 66
Book Description
Aluminum is an ideal metal for solution-processed oxide dielectrics because it can form polymerized hydroxo networks in aqueous solution and dense amorphous oxide dielectrics by vacuum methods. Atomic layer deposition (ALD) is one of the traditional vacuum methods for thin film deposition, however, ALD is not the most economically feasible method for thin film fabrication due to high operational cost and limitations in large surface-area applications. Solution deposition is a more economical deposition method which is more cost-saving and ideal for large surface area thin film fabrication. The behavior of the solution-solid structural conversion remains an enigma; thus, this research seeks to understand the structural transformation of thin films from solution to solid in order to fabricate films with optimal properties.Aluminum oxide (AlxOy) thin films prepared from aqueous solution-deposited cluster precursors have been proposed for use in devices such as high-k dielectrics in solar cell materials. The films are fabricated with different aluminum-derived precursors, spin-coated on a substrate and annealed at a range of temperatures. The low temperature range of these films are amorphous, therefore lack long range order. Solid-state nuclear magnetic resonance (ssNMR) can be used to determine the amorphous structure of these materials. Herein, a combination of X-ray diffraction (XRD), and NMR techniques are used to elucidate the transformation of these thin films as they are annealed to high temperatures.
Studies of Aluminum Oxide Thin Films
Author: Kenneth Michael GustinPublisher:
ISBN:
Category : Aluminum oxide
Languages : en
Pages : 656
Book Description
Preparation and Properties of Thin Films of Aluminum Oxide and Iron Oxide on Silicon Substrates
Author: Carolyn HanniganComprehensive Dissertation Index
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 1116
Book Description
Investigation of Industrially-Suited Processes for Deposition of Oxide Thin Films by High Power Impulse Magnetron Sputtering
Author: Felipe de Campos CarreriPublisher: Fraunhofer Verlag
ISBN: 9783839612873
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
The scope of this work is to investigate and to develop advanced HIPIMS processes for deposition of oxides, utilizing industrial-scale equipment and technology. Two classes of oxide materials were studied: insulating (aluminum oxide) and conducting oxides (indium-tin oxide and aluminum-doped zinc oxide). The electrical properties of the oxides have a significant influence on the process design, as the issues and approaches for deposition of insulating materials are fairly different from conducting materials. Different types of reactive process control were also investigated, utilizing optical emission spectroscopy to control the oxygen flow and lambda probes to control the discharge power. A non-reactive process was also studied for indium-tin oxide.