Author: Conrad Louis Benoni ShuddemagenPublisher:
ISBN:
Category : Magnetism
Languages : en
Pages : 88
Book Description
The Demagnetizing Factors for Cylindrical Iron Rods
Author: Conrad Louis Benoni ShuddemagenPublisher:
ISBN:
Category : Magnetism
Languages : en
Pages : 88
Book Description
The Invariants of Linear Differential Expressions
Author: Frank IrwinPublisher:
ISBN:
Category : Differential equations, Linear
Languages : en
Pages : 74
Book Description
Proceedings of the American Academy of Arts and Sciences
Author: Proceedings of the American Academy of Arts and Sciences
Author: American Academy of Arts and SciencesPublisher:
ISBN:
Category : Humanities
Languages : en
Pages : 496
Book Description
Vol. 12 (from May 1876 to May 1877) includes: Researches in telephony / by A. Graham Bell.
The B
Author: Science
Author: John Michels (Journalist)Publisher:
ISBN:
Category : Science
Languages : en
Pages : 962
Book Description
Vols. for 1911-13 contain the Proceedings of the Helminothological Society of Washington, ISSN 0018-0120, 1st-15th meeting.
The United States Catalog
Author: Introduction to Magnetic Random-Access Memory
Author: Bernard DienyPublisher: John Wiley & Sons
ISBN: 1119079446
Category : Science
Languages : en
Pages : 328
Book Description
Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.
Electrical Age
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 526
Book Description
Physical Review
Author: Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 746
Book Description
Vols. for 1903- include Proceedings of the American Physical Society.