Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition PDF Download

Author: Sung-bo Hwang
Publisher:
ISBN:
Category : Germanium
Languages : en
Pages : 350

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Author: John D. Leighton
Publisher:
ISBN:
Category :
Languages : en
Pages : 246

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Author: Karl Robert Erickson
Publisher:
ISBN:
Category :
Languages : en
Pages : 124

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This thesis reports on the growth chemistry and appropriate process parameters that result in the formation of micro-crystalline silicon-germanium and silicon-carbon films. The growth technique uses an electron-cyclotron-resonance-chemical-vapor-deposition apparatus. This apparatus allows the process engineer to control such parameters as the plasma resonance plane, substrate temperature, microwave power, vacuum pressure, gas flow ratios, and gas combinations. The plasma gas is hydrogen and the precursor gases are silane and germane. The hydrogen ions and electrons in the plasma dissociate the precursor gases into radicals that give rise to film growth on the substrate. The substrate temperatures are kept below 300 C so that deposition on polyimide substrates can be performed.

Author: Hwei Yin Serene Koh
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 238

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Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality. This dissertation begins with a review of the MOSFET leakage current problem and presents one potential solution: Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes because they do not have the fundamental 'kT/q' limit in the rate at which conventional MOSFETs can be turned on or off. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. Silicon Germanium (SiGe) is one possible material system that could be used to fabricate enhanced BTBT transistors. Rapid Melt Growth (RMG) is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve in its phase diagram. The development of process and experimental results for obtaining SiGe-on-insulator (SGOI) from bulk Si substrates through RMG are presented. The theory of RMG is analyzed and compositional profiles obtained during RMG of SiGe are modeled to understand why we were able to obtain high quality lateral compositionally graded SGOI substrates. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams. This opens up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.

Author:
Publisher: Elsevier
ISBN: 0080541003
Category : Science
Languages : en
Pages : 514

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Author: S. Pantellides
Publisher: CRC Press
ISBN: 9781560329633
Category : Technology & Engineering
Languages : en
Pages : 552

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Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials

Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 768

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Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566772327
Category : Technology & Engineering
Languages : en
Pages : 470

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Author: Douglas T. Grider
Publisher:
ISBN:
Category :
Languages : en
Pages : 130

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Author: Scott Anderson Middlebrooks
Publisher:
ISBN:
Category :
Languages : en
Pages : 220

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