Author: Amtec Engineering Inc
Publisher:
ISBN:
Category : Computer graphics
Languages : en
Pages : 526
Book Description
Tecplot, Version 6 User's Manual
Author: Amtec Engineering Inc
Publisher:
ISBN:
Category : Computer graphics
Languages : en
Pages : 526
Book Description
Publisher:
ISBN:
Category : Computer graphics
Languages : en
Pages : 526
Book Description
Tecplot, Version 7 User's Manual
Tecplot User's Manual
Author: Amtec Engineering Inc
Publisher:
ISBN:
Category : Computer graphics
Languages : en
Pages : 612
Book Description
Publisher:
ISBN:
Category : Computer graphics
Languages : en
Pages : 612
Book Description
CFL3D User's Manual (Version 5.0)
Modeling and Computation in Environmental Sciences
Author: Rainer Helmig
Publisher: Springer Science & Business Media
ISBN: 3322895653
Category : Technology & Engineering
Languages : en
Pages : 252
Book Description
This volume contains 20 contributions to the 1st GAMM-Seminar at ICA Stuttgart, which was held in Stuttgart, October 12 - 13, 1995. In the field of environmental sciences, numerical procedures for the simulation of ecological problems are growing increasingly topical. The solution of typical problems in environmental research is closely connected with numerical supercomputing. The main subject of the seminar was the modeling and numerical simulation of ground water and soil water. Further topics were multi-scale modeling, special discretization schemes, adaptivity, multi-grid methods, heterogenity, parameter identification, homogenization, density driven groundwater flow, and coupling of transport and chemistry.
Publisher: Springer Science & Business Media
ISBN: 3322895653
Category : Technology & Engineering
Languages : en
Pages : 252
Book Description
This volume contains 20 contributions to the 1st GAMM-Seminar at ICA Stuttgart, which was held in Stuttgart, October 12 - 13, 1995. In the field of environmental sciences, numerical procedures for the simulation of ecological problems are growing increasingly topical. The solution of typical problems in environmental research is closely connected with numerical supercomputing. The main subject of the seminar was the modeling and numerical simulation of ground water and soil water. Further topics were multi-scale modeling, special discretization schemes, adaptivity, multi-grid methods, heterogenity, parameter identification, homogenization, density driven groundwater flow, and coupling of transport and chemistry.
Flight, Wind-Tunnel, and Computational Fluid Dynamics Comparison for Cranked Arrow Wing (F-16XL-1) at Subsonic and Transonic Speeds
Author: John E. Lamar
Publisher:
ISBN:
Category : Airplanes
Languages : en
Pages : 170
Book Description
Geometrical, flight, computational fluid dynamics (CFD), and wind-tunnel studies for the F-16XL-1 airplane are summarized over a wide range of test conditions. Details are as follows: (1) For geometry, the upper surface of the airplane and the numerical surface description compare reasonably well. (2) For flight, CFD, and wind-tunnel surface pressures, the comparisons are generally good at low angles of attack at both subsonic and transonic speeds; however, local differences are present. In addition, the shock location at transonic speeds from wind-tunnel presure contours is near the aileron hinge line and generally is in correlative agreement with flight results.
Publisher:
ISBN:
Category : Airplanes
Languages : en
Pages : 170
Book Description
Geometrical, flight, computational fluid dynamics (CFD), and wind-tunnel studies for the F-16XL-1 airplane are summarized over a wide range of test conditions. Details are as follows: (1) For geometry, the upper surface of the airplane and the numerical surface description compare reasonably well. (2) For flight, CFD, and wind-tunnel surface pressures, the comparisons are generally good at low angles of attack at both subsonic and transonic speeds; however, local differences are present. In addition, the shock location at transonic speeds from wind-tunnel presure contours is near the aileron hinge line and generally is in correlative agreement with flight results.
NASA Technical Paper
Predicting Radiative Heat Transfer in Thermochemical Nonequilibrium Flow Fields
Author: Lin Hartung Chambers
Publisher:
ISBN:
Category : Heat
Languages : en
Pages : 80
Book Description
Abstract: The theory for radiation emission, absorption, and transfer in a thermochemical nonequilibrium flow is presented. The expression developed reduce correctly to the limit at equilibrium. To implement the theory in a practical computer code, some approximations are used, particularly the smearing of molecular radiation. Details of these approximations are presented and helpful information is included concerning the use of the computer code. This user's manual should benefit both occasional users of the Langley Optimized RAdiative Nonequilibrium (LORAN) code and those who wish to use it to experiment with improved models or properties.
Publisher:
ISBN:
Category : Heat
Languages : en
Pages : 80
Book Description
Abstract: The theory for radiation emission, absorption, and transfer in a thermochemical nonequilibrium flow is presented. The expression developed reduce correctly to the limit at equilibrium. To implement the theory in a practical computer code, some approximations are used, particularly the smearing of molecular radiation. Details of these approximations are presented and helpful information is included concerning the use of the computer code. This user's manual should benefit both occasional users of the Langley Optimized RAdiative Nonequilibrium (LORAN) code and those who wish to use it to experiment with improved models or properties.
Introducing Technology Computer-Aided Design (TCAD)
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 9814745529
Category : Science
Languages : en
Pages : 438
Book Description
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
Publisher: CRC Press
ISBN: 9814745529
Category : Science
Languages : en
Pages : 438
Book Description
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
Simulation of Electrochemical Processes II
Author: V.G. DeGiorgi
Publisher: WIT Press
ISBN: 1845640713
Category : Technology & Engineering
Languages : en
Pages : 369
Book Description
This book contains papers presented at the Second International Conference in this successful series, which presents and discusses the state-of-the-art on the computer simulation of corrosion, electrochemical processes and the electrical and electromagnetic fields associated with them.Modern industry applies a wide range of electrochemical processes to protect against corrosion, provide surface treatments and to manufacture products. This book focuses on the computer modelling of these industrial processes and techniques by examining the developments of computational models and their application in practice.Featured topics include: Cathodic Protection Systems; Modelling Methodologies; Electrodeposition and Electroforming; Modelling of Coatings; Modelling Stress Corrosion, Cracking and Corrosion Fatigue; Modelling and Corrosion of Surface Coatings; Interference and Signature Control; Anodic Protection; Electrocoating and Plating; Optimisation of Control Systems; Detection and Monitoring of Corrosion; Measurement Techniques; Fuel on Photovoltaic Cells; Electrolysis Reactors; Comparison of Experimental Measurements and Computer results, Case Studies.
Publisher: WIT Press
ISBN: 1845640713
Category : Technology & Engineering
Languages : en
Pages : 369
Book Description
This book contains papers presented at the Second International Conference in this successful series, which presents and discusses the state-of-the-art on the computer simulation of corrosion, electrochemical processes and the electrical and electromagnetic fields associated with them.Modern industry applies a wide range of electrochemical processes to protect against corrosion, provide surface treatments and to manufacture products. This book focuses on the computer modelling of these industrial processes and techniques by examining the developments of computational models and their application in practice.Featured topics include: Cathodic Protection Systems; Modelling Methodologies; Electrodeposition and Electroforming; Modelling of Coatings; Modelling Stress Corrosion, Cracking and Corrosion Fatigue; Modelling and Corrosion of Surface Coatings; Interference and Signature Control; Anodic Protection; Electrocoating and Plating; Optimisation of Control Systems; Detection and Monitoring of Corrosion; Measurement Techniques; Fuel on Photovoltaic Cells; Electrolysis Reactors; Comparison of Experimental Measurements and Computer results, Case Studies.