Author: Suryanarayanan GanesanPublisher:
ISBN:
Category :
Languages : en
Pages : 222
Book Description
Substrate Engineering for Defect Reduction and Microsctructure Control in the Growth of Indium Arsenide on (100) Gallium Arsenide
Author: Suryanarayanan GanesanPublisher:
ISBN:
Category :
Languages : en
Pages : 222
Book Description
Bandstructure Engineering of Indium Arsenide Quantum Dots in Gallium Arsenide Antimonide Barriers for Photovoltaic Applications
Author: Jonathan BoylePublisher:
ISBN:
Category : Indium arsenide
Languages : en
Pages : 0
Book Description
Increasing the efficiency of solar cell technology is one of the current research aims being under taken in order to help supply growing global energy demands. The research presented in this thesis contributes to the current materials hunt for suitable candidates for an Intermediate Band Solar Cell (IBSC). A background on other "third generation" photovoltaic concepts along with details about the IBSC concept is also presented. The research presented in this thesis contains theoretical and experimental work on a quantum dot (QD) nanostructure. The structure contains a GaAs substrate, followed by a 10 nm GaAs 1-x Sb x barrier, a single layer of InAs QDs, followed by another 10 nm GaAs 1-x Sb x barrier and then capped by a thick GaAs layer. Theoretical calculations that accounted for strain were performed for a range of Sb compositions (x=0.04, 0.12, 0.14, 0.18, 0.22, 0.26, 0.30), for a QD of modeled size of 40 nm x 40 nm x 5 nm (WxLxH) at 4.4 K. Three samples containing the above structure were also studied by time integrated- and time resolved-photoluminescence. The samples had a 12% Sb concentration, but varied by their GaAs 1-x Sb x barrier thicknesses. Sample A had symmetric Sb barriers of 20 nm for the bottom and 20 nm for the top. Sample B had symmetric barriers of 10 nm for the bottom and 10 nm for the top, while sample C had asymmetric barriers of 30 nm for the bottom and 10 nm for the top. The samples were studied for temperature dependence for the range of 4.4 K to 300 K, and for excitation dependence from ~3 W/cm 2 -225 W/cm 2.
Chemical Abstracts
Author: Growth of Highly Ordered Indium Arsenide/gallium Arsenide and Indium Gallium Arsenide/gallium Arsenide Quantum Dots on Nano-patterned Substrates by MBE.
Author: Wei GuoPublisher:
ISBN: 9780549675549
Category : Arsenides
Languages : en
Pages : 244
Book Description
Iron-catalyzed free radical generation has been proposed to contribute to oxidative stress and toxicity upon exposure to ambient particulate and amphibole asbestos fibers. Simple acellular assays were validated and used to show that toxicologically significant amounts of iron can be mobilized from a diverse set of commercial nanotube samples in the presence of ascorbate and the chelating agent ferrozine. The redox activity was examined by plasmid DNA breakage. Techniques were applied to avoid or remove this bioavailable metal. Potentially responsible mechanisms and optimized acid treatment protocols for free metal in "purified" samples are discussed.
Gallium Arsenide on Silicon Substrate
Author: Young-Soon KimPublisher:
ISBN: 9780530006475
Category : Technology & Engineering
Languages : en
Pages : 196
Book Description
Abstract: semiconductor wafers Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Gallium Arsenide on Silicon Substrate" by Young-Soon Kim, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications
Author: J. A. CapePublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 116
Book Description
Distribution and Control of Misfit Dislocations in Indium Gallium Arsenide Layers Grown on Gallium Arsenide Substrates
Author: Glyn MacPhersonGallium Arsenide Technology
Author: David K. FerryPublisher: Sams Technical Publishing
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 504
Book Description
The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates
Author: David Ian WestwoodSolution Growth of Gallium Arsenide
Author: Stephen Ingalls LongPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 246
Book Description
The theory and experimental procedure for growth of epitaxial layers of GaAs by the solution regrowth method is described. Both GaAs of low carrier concentration with high mobility and intentionally doped GaAs layers, suitable for application to Gunn effect devices, can be grown by this process. Several methods for the evaluation of the thickness, doping profiles and mobility of the GaAs layers are discussed. The limitations of these methods are also presented. Several working Gunn devices were fabricated either with solution grown contacts on commercially made epitaxial active layers or with solution grown active layers. (Author).