Sub-1 V, 4 NA CMOS Voltage References with Digitally-trimmable Temperature Coefficient PDF Download
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Author: Peter Luong Publisher: ISBN: Category : Languages : en Pages :
Book Description
Voltage references are fundamental to mixed signal converters which are widely used in elec- tronics. Hence there are signicant advantages in having the voltage reference operate with less power while minimizing area consumption and maintaining performance. Past designs have suered from issues related to process variations which adversely aect the temperature coe- cient of the circuit output. To compensate for these process variations, a means to modify the temperature coecient are proposed and experimentally veried with two circuit architectures. Five test chip samples implement these architectures in a 0.35 m CMOS process. Design methodologies for both architectures are presented. Design techniques include the use of a high-swing cascode to improve Line Sensitivity while minimizing additional power consumption, accounting for a well-matched layout, and the eect of leakage currents on the performance of the circuit. Layout schematics, performance gures, test methodologies and results are presented. Each circuit dissipates less than 4 nW and operates down to 0.9 V or better with Line Sensitivity and Power Supply Rejection Ratio of less than 0.15 %/V and -58 dB respectively, while consuming an area of 0.053 mm2 or less. The experimental average and median temperature coecient was less than 26 ppm/C and 22 ppm/C respectively in the #x0;20 C to 80 C range, with the best performance being less than 8.1 ppm/C. Areas of improvement and potential areas of future research are then identied to facilitate advancement of this work.
Author: Peter Luong Publisher: ISBN: Category : Languages : en Pages :
Book Description
Voltage references are fundamental to mixed signal converters which are widely used in elec- tronics. Hence there are signicant advantages in having the voltage reference operate with less power while minimizing area consumption and maintaining performance. Past designs have suered from issues related to process variations which adversely aect the temperature coe- cient of the circuit output. To compensate for these process variations, a means to modify the temperature coecient are proposed and experimentally veried with two circuit architectures. Five test chip samples implement these architectures in a 0.35 m CMOS process. Design methodologies for both architectures are presented. Design techniques include the use of a high-swing cascode to improve Line Sensitivity while minimizing additional power consumption, accounting for a well-matched layout, and the eect of leakage currents on the performance of the circuit. Layout schematics, performance gures, test methodologies and results are presented. Each circuit dissipates less than 4 nW and operates down to 0.9 V or better with Line Sensitivity and Power Supply Rejection Ratio of less than 0.15 %/V and -58 dB respectively, while consuming an area of 0.053 mm2 or less. The experimental average and median temperature coecient was less than 26 ppm/C and 22 ppm/C respectively in the #x0;20 C to 80 C range, with the best performance being less than 8.1 ppm/C. Areas of improvement and potential areas of future research are then identied to facilitate advancement of this work.
Author: Chi-Wah Kok Publisher: John Wiley & Sons ISBN: 1118275713 Category : Technology & Engineering Languages : en Pages : 327
Book Description
A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits. The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology, and potential problems with each type of circuit. Many design examples are used throughout, most of which have been tested with silicon implementation or employed in real-world products. This ensures that the material presented relevant to both students studying the topic as well as readers requiring a practical viewpoint. Covers CMOS voltage reference circuit design, from the basics through to advanced topics Provides an overview of basic device physics and different building blocks of voltage reference designs Features real-world examples based on actual silicon implementation Includes analytical exercises, simulation exercises, and silicon layout exercises, giving readers guidance and design layout experience for voltage reference circuits Solution manual available to instructors from the book’s companion website This book is highly useful for graduate students in VLSI design, as well as practicing analog engineers and IC design professionals. Advanced undergraduates preparing for further study in VLSI will also find this book a helpful companion text.
Author: Johnson I. Agbinya Publisher: CRC Press ISBN: 1000819337 Category : Technology & Engineering Languages : en Pages : 363
Book Description
This book is a detailed compendium of these major advancements focusing exclusively on the emerging broadband wireless communication technologies which support broadband wireless data rate transmissions.
Author: Peter Lisle Schaeffer Publisher: ISBN: Category : Languages : en Pages : 130
Book Description
A traditional bandgap reference voltage has a value approximately equal to 1.2V. This is an inconvenient value to obtain in short-channel CMOS circuits where the nominal power supply voltage is 1.2V or lower. Here, a simple circuit is presented to generate a reference voltage between 600mV and 800mV, based on the threshold voltage of a MOS device, which will be suitable for biasing transistors in strong inversion as well as for use in 6-bit data converters needed for high speed data communication systems. The circuit uses a novel, but simple, method for generating the temperature coefficients needed for generating a stable voltage reference across temperature. The core circuit produces a PTAT current that when passed through a diode-connected device, with a CTAT threshold voltage, will produce a voltage that is stable across temperature. The measured results demonstrate an average voltage variation of 4.62mV across five chips, each containing eight voltage reference circuits, and a minimum voltage variation of 1.1mV from 0°C to 80°C. A variation of the proposed circuit replaces the BJTs with MOSFETs to achieve smaller area, and simulation results indicate even less voltage variation across temperature.
Author: S. Mahdi Kashmiri Publisher: Springer Science & Business Media ISBN: 1461464730 Category : Technology & Engineering Languages : en Pages : 219
Book Description
This book describes an alternative method of realizing accurate on-chip frequency references in standard CMOS processes. This method exploits the thermal-diffusivity of silicon, i.e. the rate at which heat diffuses through a silicon substrate. This is the first book describing the design of such electrothermal frequency references. It includes the necessary theory, supported by practical realizations that achieve inaccuracies as low as 0.1% and thus demonstrate the feasibility of this approach. The book also includes several circuit and system-level solutions to the precision circuit design challenges encountered during the design of such frequency references.
Author: Linden T. Harrison Publisher: Elsevier ISBN: 0080455557 Category : Technology & Engineering Languages : en Pages : 603
Book Description
Current Sources and Voltage References provides fixed, well-regulated levels of current or voltage within a circuit. These are two of the most important “building blocks “ of analog circuits, and are typically used in creating most analog IC designs. Part 1 shows the reader how current sources are created, how they can be optimized, and how they can be utilized by the OEM circuit designer. The book serves as a “must-have reference for the successful development of precision circuit applications. It shows practical examples using either BJTs, FETs, precision op amps, or even matched CMOS arrays being used to create highly accurate current source designs, ranging from nanoAmps to Amps. In each chapter the most important characteristics of the particular semiconductor type being studied are carefully reviewed. This not only serves as a helpful refresher for experienced engineers, but also as a good foundation for all EE student coursework, and includes device models and relevant equations. Part 2 focuses on semiconductor voltage references, from their design to their various practical enhancements. It ranges from the simple Zener diode to today’s most advanced topologies, including Analog Devices’ XFET® and Intersil’s FGATM (invented while this book was being written). Over 300 applications and circuit diagrams are shown throughout this easy-to-read, practical reference book. * Discusses how to design low-noise, precision current sources using matched transistor pairs. * Explains the design of high power current sources with power MOSFETs * Gives proven techniques to reduce drift and improve accuracy in voltage references.
Author: Yuan Taur Publisher: Cambridge University Press ISBN: 9781107635715 Category : Technology & Engineering Languages : en Pages : 0
Book Description
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Author: Ron Mancini Publisher: Newnes ISBN: 0750677015 Category : Technology & Engineering Languages : en Pages : 470
Book Description
The operational amplifier ("op amp") is the most versatile and widely used type of analog IC, used in audio and voltage amplifiers, signal conditioners, signal converters, oscillators, and analog computing systems. Almost every electronic device uses at least one op amp. This book is Texas Instruments' complete professional-level tutorial and reference to operational amplifier theory and applications. Among the topics covered are basic op amp physics (including reviews of current and voltage division, Thevenin's theorem, and transistor models), idealized op amp operation and configuration, feedback theory and methods, single and dual supply operation, understanding op amp parameters, minimizing noise in op amp circuits, and practical applications such as instrumentation amplifiers, signal conditioning, oscillators, active filters, load and level conversions, and analog computing. There is also extensive coverage of circuit construction techniques, including circuit board design, grounding, input and output isolation, using decoupling capacitors, and frequency characteristics of passive components. The material in this book is applicable to all op amp ICs from all manufacturers, not just TI. Unlike textbook treatments of op amp theory that tend to focus on idealized op amp models and configuration, this title uses idealized models only when necessary to explain op amp theory. The bulk of this book is on real-world op amps and their applications; considerations such as thermal effects, circuit noise, circuit buffering, selection of appropriate op amps for a given application, and unexpected effects in passive components are all discussed in detail. *Published in conjunction with Texas Instruments *A single volume, professional-level guide to op amp theory and applications *Covers circuit board layout techniques for manufacturing op amp circuits.
Author: Charles Batchelor Professor of Electrical Engineering Yannis Tsividis Publisher: ISBN: 9780199733774 Category : Metal oxide semiconductor field-effect transistors Languages : en Pages : 248
Author: Peter Luong
Author: Peter Luong
Author: Chi-Wah Kok
Author: Johnson I. Agbinya
Author: Peter Lisle Schaeffer
Author: Fang Fang
Author: S. Mahdi Kashmiri
Author: Linden T. Harrison
Author: Yuan Taur
Author: Ron Mancini
Author: Charles Batchelor Professor of Electrical Engineering Yannis Tsividis