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Author: Yifan Xu Publisher: ISBN: Category : Dielectric films Languages : en Pages :
Book Description
Abstract: The aim of this Ph. D. project is to explore the operating mechanism of polymer field effect transistors (PFETs) to improve their performance. This dissertation presents thin film insulators as new gate dielectric materials to relax the requirement for driving voltages and illustrates some unique features of field dependent mobility in PFETs. Light responsive PFETs based on new polymer semiconductors are also demonstrated as a potential application of PFETs. Pulsed plasma deposited polymer insulating films were investigated for their potential application as the gate dielectric in PFETs. The work on pulsed plasma polymerized (PPP) thin film insulators put emphasis on improving the dielectric constant of the thin polymer films. Early work on PPP allylamine films indicated that the chamber temperature during pulsed plasma polymerization has an effect on the dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. Later work on PPP dichlorotetramethyldisiloxane (DCTMDS) films demonstrated very high dielectric constants for an organic-based system, in the range of 7 to 10. Poly(3-hexythiophene) (P3HT) FETs using PPP DCTMDS gate dielectric films were fabricated and tested. The field dependent mobility was demonstrated in polythiophene (PT) FETs by varying the gate length. The field effect mobility in polythiophene FETs increases with reduced channel lengths for high driving forces across the source and drain. The longitudinal electric field (across source and drain) dependence of the field effect mobility is believed to create the rise in mobility once the longitudinal electric field exceeds a critical value of 100 KV/cm. The photoresponse of PFET based on the 2,5-bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) was also investigated. A sweep of V[subscript DS] shows that BAS-PPE favors hole injection and transport. A sweep of V[subscript GS] shows an increase in I[subscript DS] with different light intensities. Overall, this dissertation studied features of PFETs and suggested techniques to improve their performance, which hopefully will contribute to future progress of polymer electronics.
Author: Yifan Xu Publisher: ISBN: Category : Dielectric films Languages : en Pages :
Book Description
Abstract: The aim of this Ph. D. project is to explore the operating mechanism of polymer field effect transistors (PFETs) to improve their performance. This dissertation presents thin film insulators as new gate dielectric materials to relax the requirement for driving voltages and illustrates some unique features of field dependent mobility in PFETs. Light responsive PFETs based on new polymer semiconductors are also demonstrated as a potential application of PFETs. Pulsed plasma deposited polymer insulating films were investigated for their potential application as the gate dielectric in PFETs. The work on pulsed plasma polymerized (PPP) thin film insulators put emphasis on improving the dielectric constant of the thin polymer films. Early work on PPP allylamine films indicated that the chamber temperature during pulsed plasma polymerization has an effect on the dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. Later work on PPP dichlorotetramethyldisiloxane (DCTMDS) films demonstrated very high dielectric constants for an organic-based system, in the range of 7 to 10. Poly(3-hexythiophene) (P3HT) FETs using PPP DCTMDS gate dielectric films were fabricated and tested. The field dependent mobility was demonstrated in polythiophene (PT) FETs by varying the gate length. The field effect mobility in polythiophene FETs increases with reduced channel lengths for high driving forces across the source and drain. The longitudinal electric field (across source and drain) dependence of the field effect mobility is believed to create the rise in mobility once the longitudinal electric field exceeds a critical value of 100 KV/cm. The photoresponse of PFET based on the 2,5-bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) was also investigated. A sweep of V[subscript DS] shows that BAS-PPE favors hole injection and transport. A sweep of V[subscript GS] shows an increase in I[subscript DS] with different light intensities. Overall, this dissertation studied features of PFETs and suggested techniques to improve their performance, which hopefully will contribute to future progress of polymer electronics.
Author: Ting Lei Publisher: Springer ISBN: 3662456672 Category : Technology & Engineering Languages : en Pages : 124
Book Description
The book summarizes Ting Lei’s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication. The research results have previously scattered in many important journals and conferences worldwide. The book is likely to be of interest to university researchers, engineers and graduate students in materials sciences and chemistry who wish to learn some principles, strategy, and applications of polymer FETs.
Author: Zhenan Bao Publisher: CRC Press ISBN: 1351837575 Category : Technology & Engineering Languages : en Pages : 578
Book Description
The remarkable development of organic thin film transistors (OTFTs) has led to their emerging use in active matrix flat-panel displays, radio frequency identification cards, and sensors. Exploring one class of OTFTs, Organic Field-Effect Transistors provides a comprehensive, multidisciplinary survey of the present theory, charge transport studies, synthetic methodology, materials characterization, and current applications of organic field-effect transistors (OFETs). Covering various aspects of OFETs, the book begins with a theoretical description of charge transport in organic semiconductors at the molecular level. It then discusses the current understanding of charge transport in single-crystal devices, small molecules and oligomers, conjugated polymer devices, and charge injection issues in organic transistors. After describing the design rationales and synthetic methodologies used for organic semiconductors and dielectric materials, the book provides an overview of a variety of characterization techniques used to probe interfacial ordering, microstructure, molecular packing, and orientation crucial to device performance. It also describes the different processing techniques for molecules deposited by vacuum and solution, followed by current technological examples that employ OTFTs in their operation. Featuring respected contributors from around the world, this thorough, up-to-date volume presents both the theory behind OFETs and the latest applications of this promising technology.
Author: Ndubuisi Benjamin Ukah Publisher: ISBN: Category : Electronic Dissertations Languages : en Pages : 115
Book Description
This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method - matrix assisted pulsed laser evaporation (MAPLE) - of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltages (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Low-voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in PC, is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.
Author: Xuefeng Guo Publisher: John Wiley & Sons ISBN: 3527840478 Category : Technology & Engineering Languages : en Pages : 277
Book Description
Interface Engineering in Organic Field-Effect Transistors Systematic summary of advances in developing effective methodologies of interface engineering in organic field-effect transistors, from models to experimental techniques Interface Engineering in Organic Field-Effect Transistors covers the state of the art in organic field-effect transistors and reviews charge transport at the interfaces, device design concepts, and device fabrication processes, and gives an outlook on the development of future optoelectronic devices. This book starts with an overview of the commonly adopted methods to obtain various semiconductor/semiconductor interfaces and charge transport mechanisms at these heterogeneous interfaces. Then, it covers the modification at the semiconductor/electrode interfaces, through which to tune the work function of electrodes as well as reveal charge injection mechanisms at the interfaces. Charge transport physics at the semiconductor/dielectric interface is discussed in detail. The book describes the remarkable effect of SAM modification on the semiconductor film morphology and thus the electrical performance. In particular, valuable analyses of charge trapping/detrapping engineering at the interface to realize new functions are summarized. Finally, the sensing mechanisms that occur at the semiconductor/environment interfaces of OFETs and the unique detection methods capable of interfacing organic electronics with biology are discussed. Specific sample topics covered in Interface Engineering in Organic Field-Effect Transistors include: Noncovalent modification methods, charge insertion layer at the electrode surface, dielectric surface passivation methods, and covalent modification methods Charge transport mechanism in bulk semiconductors, influence of additives on materials’ nucleation and morphology, solvent additives, and nucleation agents Nanoconfinement effect, enhancing the performance through semiconductor heterojunctions, planar bilayer heterostructure, ambipolar charge-transfer complex, and supramolecular arrangement of heterojunctions Dielectric effect in OFETs, dielectric modification to tune semiconductor morphology, surface energy control, microstructure design, solution shearing, eliminating interfacial traps, and SAM/SiO2 dielectrics A timely resource providing the latest developments in the field and emphasizing new insights for building reliable organic electronic devices, Interface Engineering in Organic Field-Effect Transistors is essential for researchers, scientists, and other interface-related professionals in the fields of organic electronics, nanoelectronics, surface science, solar cells, and sensors.
Author: Dhanasekaran Vikraman Publisher: BoD – Books on Demand ISBN: 1789234166 Category : Technology & Engineering Languages : en Pages : 168
Book Description
In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Author: Felix Sunjoo Kim Publisher: ISBN: Category : Conjugated polymers Languages : en Pages : 131
Book Description
The era of plastic electronics is rapidly emerging due to the increasing development and application of low-cost, printable, shape-conforming, and large-area devices, such as organic field-effect transistors (OFETs) and circuits, organic solar cells, and organic light-emitting devices. Deepening our understanding of charge-carrier dynamics in polymer semiconductors is critical to the future advances in organic electronics. This dissertation focuses on studies of OFETs and aims to better understand the charge transport properties of polymer semiconductors and factors that influence the performance of OFETs. Case studies of structure-morphology-property relationships in unipolar p- and n-channel polymer OFETs as well as ambipolar OFETs reveal that variations in molecular structure and processing affect electronic energy levels, solid-state morphology and crystallinity, and thus the magnitude and polarity of charge carriers. The studies resulted in achievement of high-performance OFETs with high charge-carrier mobility of up to 0.3 cm2/Vs. The morphology and electronic energy levels are also related to ambient stability and durability of polymer OFETs through kinetics and thermodynamics of interaction between the semiconductor and extrinsic molecules in ambient air. Air-stable ambipolar OFETs were realized by utilizing unipolar p- and n-type polymer semiconductors as the active channel elements. Complementary digital logic circuits such as inverters and NAND- and NOR-gates, were also demonstrated using the unipolar and ambipolar OFETs. Device engineering studies show that electron mobility and electrical stability of n-channel polymer OFETs can be significantly enhanced by inserting a low-dielectric-constant polymer dielectric buffer layer at the semiconductor/dielectric interface. Electron mobility was found to increase exponentially with decreasing dielectric constant of the buffer layer. Finally, poly(3-butylthiophene)-nanowire/polystyrene nanocomposites were also investigated as a means of controlling the solid-state morphology of active thin films in OFETs. High dc conductivity and high hole mobility were obtained throughout a wide range of the nanowire compositions (2-100 wt%) due in part to the very low percolation threshold (0.5 wt%).
Author: Dharmendra Singh Yadav Publisher: CRC Press ISBN: 1003816266 Category : Technology & Engineering Languages : en Pages : 306
Book Description
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Author: Ioannis Kymissis Publisher: Springer Science & Business Media ISBN: 0387921346 Category : Technology & Engineering Languages : en Pages : 156
Book Description
Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Author: Yifan Xu
Author: Yifan Xu
Author: 
Author: Ting Lei
Author: Zhenan Bao
Author: Ndubuisi Benjamin Ukah
Author: Xuefeng Guo
Author: Dhanasekaran Vikraman
Author: Felix Sunjoo Kim
Author: Dharmendra Singh Yadav
Author: Ioannis Kymissis