Author: Stephen D. OffseyPublisher:
ISBN:
Category :
Languages : en
Pages : 378
Book Description
Strained Layer Lasers Grown by Molecular Beam Epitaxy for High Speed Modulation
Author: Stephen D. OffseyHigh Speed Diode Lasers
Author: Sergei A. GurevichPublisher: World Scientific
ISBN: 9789810232375
Category : Science
Languages : en
Pages : 220
Book Description
This book is composed of seven invited papers which present the current status of high speed diode lasers. Fast carrier and photon dynamics in directly modulated MQW lasers is analyzed and novel design approaches are considered which were critical for the demonstration and record of 40 GHz modulation bandwidth. Attention is centered on the challenges in creation of high speed and low chirp single mode DFB lasers. Recent progress in mode-locked diode lasers is covered, specifically by the examples of 160 fs pulse generation and appearance of microwave pulse repetition rates. Future trends in increasing of high speed laser performance are also examined.
Physics of Photonic Devices
Author: Shun Lien ChuangPublisher: John Wiley & Sons
ISBN: 1118585658
Category : Technology & Engineering
Languages : en
Pages : 842
Book Description
The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as: surface plasmonics and micro-ring resonators; the theory of optical gain and absorption in quantum dots and quantum wires and their applications in semiconductor lasers; and novel microcavity and photonic crystal lasers, quantum-cascade lasers, and GaN blue-green lasers within the context of advanced semiconductor lasers. Physics of Photonic Devices, Second Edition presents novel information that is not yet available in book form elsewhere. Many problem sets have been updated, the answers to which are available in an all-new Solutions Manual for instructors. Comprehensive, timely, and practical, Physics of Photonic Devices is an invaluable textbook for advanced undergraduate and graduate courses in photonics and an indispensable tool for researchers working in this rapidly growing field.
Optoelectronic Integration: Physics, Technology and Applications
Author: Osamu WadaPublisher: Springer Science & Business Media
ISBN: 1461526868
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
As we approach the end of the present century, the elementary particles of light (photons) are seen to be competing increasingly with the elementary particles of charge (electrons/holes) in the task of transmitting and processing the insatiable amounts of infonnation needed by society. The massive enhancements in electronic signal processing that have taken place since the discovery of the transistor, elegantly demonstrate how we have learned to make use of the strong interactions that exist between assemblages of electrons and holes, disposed in suitably designed geometries, and replicated on an increasingly fine scale. On the other hand, photons interact extremely weakly amongst themselves and all-photonic active circuit elements, where photons control photons, are presently very difficult to realise, particularly in small volumes. Fortunately rapid developments in the design and understanding of semiconductor injection lasers coupled with newly recognized quantum phenomena, that arise when device dimensions become comparable with electronic wavelengths, have clearly demonstrated how efficient and fast the interaction between electrons and photons can be. This latter situation has therefore provided a strong incentive to devise and study monolithic integrated circuits which involve both electrons and photons in their operation. As chapter I notes, it is barely fifteen years ago since the first demonstration of simple optoelectronic integrated circuits were realised using m-V compound semiconductors; these combined either a laser/driver or photodetector/preamplifier combination.
Proceedings ... IEEE/Cornell Conference on High Performance Devices
Author: Bell Laboratories Talks and Papers
Author: Bell Telephone Laboratories, inc. Libraries and Information Systems CenterPublisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 586
Book Description
Physics Briefs
Author: Green Photonics and Electronics
Author: Gadi EisensteinPublisher: Springer
ISBN: 3319670026
Category : Technology & Engineering
Languages : en
Pages : 299
Book Description
This books focuses on recent break-throughs in the development of a variety of photonic devices, serving distances ranging from mm to many km, together with their electronic counter-parts, e.g. the drivers for lasers, the amplifiers following the detectors and most important, the relevant advanced VLSI circuits. It explains that as a consequence of the increasing dominance of optical interconnects for high performance workstation clusters and supercomputers their complete design has to be revised. This book thus covers for the first time the whole variety of interdependent subjects contributing to green photonics and electronics, serving communication and energy harvesting. Alternative approaches to generate electric power using organic photovoltaic solar cells, inexpensive and again energy efficient in production are summarized. In 2015, the use of the internet consumed 5-6% of the raw electricity production in developed countries. Power consumption increases rapidly and without some transformational change will use, by the middle of the next decade at the latest, the entire electricity production. This apocalyptic outlook led to a redirection of the focus of data center and HPC developers from just increasing bit rates and capacities to energy efficiency. The high speed interconnects are all based on photonic devices. These must and can be energy efficient but they operate in an electronic environment and therefore have to be considered in a wide scope that also requires low energy electronic devices, sophisticated circuit designs and clever architectures. The development of the next generation of high performance exaFLOP computers suffers from the same problem: Their energy consumption based on present device generations is essentially prohibitive.
Molecular Beam Epitaxy
Author: Marian A. HermanPublisher: Springer Science & Business Media
ISBN: 3642970982
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Silicon-Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351085069
Category : Technology & Engineering
Languages : en
Pages : 260
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.