Strain and Structure of Amorphous Boron Carbide and Silicon Carbide Thin Films PDF Download

Author: Jeffrey Gerard Hershberger
Publisher:
ISBN:
Category :
Languages : en
Pages : 250

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Author: Mariana Amorim Fraga
Publisher:
ISBN: 9781613247747
Category : Amorphous semiconductors
Languages : en
Pages : 0

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Book Description
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.

Author: Ruqiang Bao
Publisher:
ISBN: 9781124351155
Category :
Languages : en
Pages : 276

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Author: Mahmud M. Rahman
Publisher: Springer Science & Business Media
ISBN: 3642750486
Category : Science
Languages : en
Pages : 238

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Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.

Author: Christopher Stephen Roper
Publisher:
ISBN:
Category :
Languages : en
Pages : 390

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Tolga Tavşanoğlu
Publisher:
ISBN:
Category :
Languages : en
Pages : 203

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In this study single and multilayered boron carbide and boron carbonitride (BCN) thin films deposited with several sputtering configurations were investigated. Three types of well adherent and homogenous boron carbide films were deposited by conventional direct current (DC) magnetron sputtering, plasma-enhanced DC magnetron sputtering and radio frequency (RF) sputtering. Boron carbonitride thin films deposited by reactive DC magnetron sputtering in addition of nitrogen into processing gas were also studied. Functionally graded multilayered designs were used to growth thicker boron carbide and boron carbonitride films. An own produced, direct current compatible, conducting boron carbide target and a commercial boron carbide target was used for deposition of thin films. All boron carbide thin films deposited were amorphous. Boron carbide films deposited by conventional DC magnetron sputtering had columnar microstructures with about 20 GPa hardness and 220 GPa elastic modulus. Boron carbide films deposited by plasma-enhanced DC magnetron sputtering had featureless, non-columnar microstructures with smooth surface morphologies. Hardness values of about 40 GPa, elastic modulus of 300 GPa and wear rates of 2.6x10-8 mm3/Nm were reached for these films. Boron carbide films deposited by RF sputtering had 22 GPa hardness and 240 GPa elastic modulus. For boron carbonitride films deposited, hardness values between 10-20 GPa, elastic modulus between 135-180 GPa and wear rates of 1.5x10-9 mm3/Nm were obtained. Well adherent boron carbide and BCN top layers with thicknesses over 1 were successfully grown by means of functionally graded multilayer designs.

Author: Joseph J. Comer
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 30

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Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).

Author: Irvin Berman
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 24

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Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen reduction of silane and propane. The films were prepared under a variety of conditions and subsequently subjected to thermal annealing cycles between 1600 degrees C and 2000 degrees C. It is shown that the single crystallinity of the beta films improved with continued annealing. The beta polytype was found to be stable over the entire range of temperatures studied.

Author: Yasuto Hijikata
Publisher: BoD – Books on Demand
ISBN: 9535109170
Category : Science
Languages : en
Pages : 416

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Book Description
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.