Author: Behzad Jazizadeh KarimiPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Stoichiometric Hydrogenated Amorphous Silicon Carbide Thin Film Synthesis Using DC-saddle Plasma Enhanced Chemical Vapour Deposition
Author: Behzad Jazizadeh KarimiHydrogenated Amorphous Silicon Carbide Prepared Using DC Saddle Field PECVD for Photovoltaic Applications
Author: Cheng-Chieh YangPublisher:
ISBN: 9780494765982
Category :
Languages : en
Pages : 260
Book Description
Hydrogenated amorphous silicon carbide (a-SiC:H) can provide exceptional surface passivation essential for high-efficiency crystalline silicon solar cells. This thesis reports on the fundamental study of a-SiC:H films deposited using a novel deposition technique, DC saddle field PECVD, in contrast to the conventional industrial use of RF-PECVD. The growth conditions were optimized and correlated with passivating, structural, and optical characteristics. The lifetime has a strong dependency on deposition temperature and improves by over two orders of magnitude as the temperature increases; the maximum lifetime achieved in this work reached 0.5 ms. In addition, the Tauc optical gap can be increased from 1.7 eV to 2.3 eV by varying the precursor gas mixture ratio. Post-deposition annealing experiments demonstrate thermal stability of the samples deposited at 250 °C and in some instances shows improvement in passivation quality by a factor of two with a one-step annealing treatment at 300 °C for 15 minutes.
Amorphous Hydrogenated Silicon Carbide by Plasma Enhanced Chemical Vapor Deposition for Metal Matrix Composite Applications
Author: Howard Smith LandisPlasma Deposition of Amorphous Silicon-Based Materials
Author: Pio CapezzutoPublisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Inclusions
Author: Siri Suzanne ThompsonPublisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Silicon Carbide Films from Novel Precursors
Author: Steven Walton RyndersPublisher:
ISBN:
Category :
Languages : en
Pages : 742
Book Description
The influences of precursor molecular structure and electronic properties on the molecular structure, stoichiometry, and optical properties of a-SiC:H alloy films prepared through plasma enhanced chemical vapor deposition were investigated using infrared spectroscopy, ultraviolet-visible absorption spectroscopy, and sputtered neutral atom mass spectrometry (SNMS). Members of the homologous series tetramethylsilane (TeMS), trimethylsilane (TrMS), and dimethylsilane (DMS) as well as methane-silane (MS) were characterized as a-SiC:H precursors. Film structure, optical properties, and stoichiometry were studied as a function of precursor structure and deposition conditions, with deposition pressure serving as the manipulated variable. The infrared spectra of films prepared from the alkylsilane precursors revealed a strong dependence of the film structure on the deposition pressure, with high pressures ($>$0.1 torr) producing linear, polymeric films, and low pressures ($
Room Temperature Deposition of Amorphous Hydrogenated Silicon Carbide by Ion-assisted Plasma Enhanced Chemical Vapor Deposition
Author: Dongsun KimHydrogenated Amorphous Silicon Prepared by D.c. Plasma Enhanced Chemical Vapour Deposition of Helium Diluted Silane
Author: Roszairi HaronPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 320
Book Description
Amorphous Silicon Carbide Thin Films
Author: Mariana Amorim FragaPublisher:
ISBN: 9781613247747
Category : Amorphous semiconductors
Languages : en
Pages : 0
Book Description
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Hydrogenated Amorphous Silicon Alloy Deposition Processes
Author: Werner LuftPublisher: CRC Press
ISBN: 9780824791469
Category : Science
Languages : en
Pages : 344
Book Description
This reference reviews common film and plasma diagnostic techniques and the deposition and film properties of various hydrogenated amorphous silicon alloys (a-Si:H).;Drawing heavily from studies on a-Si:H solar cells and offering valuable insights into other semiconductor applications of a-Si:H and related alloys, Hydrogenated Amorphous Silicon Alloy Deposition Processes: describes conventional as well as alternative, deposition processes and compares the resulting material properties; systematically categorizes various a-Si:H deposition techniques; details the characteristics of a-Si:H and related alloys with both high and low optical bandgap, including a-SiC:H, a-SiGe:H, and a-SiSn:H; discusses basic designs of glow discharge deposition reactors; evaluates the etching properties of amorphous silicon-based alloys; and examines microcrystalline silicon and silicon carbide.;Providing over 825 literature citations for further study, Hydrogenated Amorphous Silicon Alloy Deposition Processes is an incomparable resource for physicists; materials scientists; chemical, process and production engineers; electrical engineers and technicians in the semiconductor industry; and upper-level undergraduate and graduate students in these disciplines.