Author: A. J. HydesPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Spectroscopic Studies of the Etching of Si and SiO2 Substrates in CF4/O2 Discharges
Author: A. J. HydesMass Spectroscopy of the Etching of Si and SiO2 in CF4/O2 Plasmas and X-ray Photoelectron Spectroscopy of Plasma Deposited Borophosphosilicate Glasses
Author: D. J. ThomasSpectroscopic Studies of the Etching of Si and SiOsub(2) Substrates in CFsub(4)/Osub(2) Discharges
Author: A. J. HydesDry Etching for VLSI
Author: A.J. van RoosmalenPublisher: Springer Science & Business Media
ISBN: 148992566X
Category : Science
Languages : en
Pages : 247
Book Description
This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Author: B.E. DealPublisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Spectroscopic Studies of the Etching of Si and SiOsub(2) Substrates in CFsub(4)
Author: Publisher:
ISBN:
Category : Chemistry, Physical and theoretical
Languages : en
Pages :
Book Description
Plasma Processing of Polymers
Author: Ricardo d'AgostinoPublisher: Springer Science & Business Media
ISBN: 9780792348597
Category : Technology & Engineering
Languages : en
Pages : 554
Book Description
Proceedings of the NATO Advanced Study Institute on Plasma Treatments and Deposition of Polymers, Acquafredda di Maratea, Italy, May 19-June 2, 1996
Japanese Journal of Applied Physics
Author: Vacuum Special Issue
Author: B. D. WilliamsPublisher:
ISBN:
Category : Metallic films
Languages : en
Pages : 180
Book Description
Thin Films From Free Atoms and Particles
Author: Kenneth KlabundePublisher: Elsevier
ISBN: 0323153488
Category : Science
Languages : en
Pages : 376
Book Description
Thin Films from Free Atoms and Particles is an eight-chapter text that describes the primary reaction modes of atoms or coordination-deficient particles. This book presents first an introduction to free atoms and particles, followed by a chapter describing the embryonic growth of films, such as dimers, trimers, and other small telomers formed and detected. The next chapters discuss the understanding of discharge processes for forming free atoms and particles. The remaining chapters deal with the technology, techniques, and materials in thin films. Physicists, engineers, materials scientists, and chemists will find this book of great value.