Author: Henry KresselPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 216
Book Description
Special Issue on Characterization of Epitaxial Semiconductor Films
Author: Henry KresselPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 216
Book Description
Characterization of Epitaxial Semiconductor Films
Author: Henry KresselPublisher:
ISBN:
Category : Couches minces
Languages : en
Pages : 216
Book Description
NBS Special Publication
Author: Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 484
Book Description
Characterization of Epitaxial Semiconductors Films
Author: Henry KresselSubject Catalog
Author: Library of CongressPublisher:
ISBN:
Category :
Languages : en
Pages : 1040
Book Description
Optical Characterization of Epitaxial Semiconductor Layers
Author: Günther BauerPublisher: Springer Science & Business Media
ISBN: 3642796788
Category : Technology & Engineering
Languages : en
Pages : 446
Book Description
The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade. In particular, the dramatic improvement of the structural quality of semiconductor epilayers and heterostructures results to a great deal from the level of sophistication achieved with such analysis techniques. First of all, optical techniques are nondestructive and their sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses on the atomic scale. Furthermore, the spatial and temporal resolution have been pushed to such limits that real time observation of surface processes during epitaxial growth is possible with techniques like reflectance difference spectroscopy. Of course, optical spectroscopies complement techniques based on the inter action of electrons with matter, but whereas the latter usually require high or ultrahigh vacuum conditions, the former ones can be applied in different environments as well. This advantage could turn out extremely important for a rather technological point of view, i.e. for the surveillance of modern semiconductor processes. Despite the large potential of techniques based on the interaction of electromagnetic waves with surfaces and epilayers, optical techniques are apparently moving only slowly into this area of technology. One reason for this might be that some prejudices still exist regarding their sensitivity.
Library of Congress Catalogs
Author: Library of CongressPublisher:
ISBN:
Category :
Languages : en
Pages : 1040
Book Description
Fabrication and Characterization of Epitaxial Yba2cu3oy Thin Films on Double-Buffered Silicon Substrates
Author: Ho-Yi Eric WongPublisher:
ISBN: 9781374711174
Category :
Languages : en
Pages :
Book Description
This dissertation, "Fabrication and Characterization of Epitaxial YBa2Cu3Oy Thin Films on Double-buffered Silicon Substrates" by Ho-yi, Eric, Wong, 黃灝頤, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled FABRICATION AND CHARACTERIZATION OF EPITAXIAL YBa Cu O 2 3 y THIN FILMS ON DOUBLE-BUFFERED SILICON SUBSTRATES submitted by WONG HO YI ERIC for the degree of Master of Philosophy at The University of Hong Kong in August 2003 The discovery of perovskite copper oxide YBa Cu O (YBCO) has aroused a 2 3 y constantly increasing interest in this material due to the potential applications in microelectronics devices, such as microwave elements, multilayer junctions, etc. Suitable substrates with a low dielectric constant, good high frequency properties, large size and low cost are necessary. Silicon substrates are widely used and well developed in the semiconductor industry and microwave device applications. Therefore, successful fabrication of high T YBCO films on silicon is of interest for various applications of hybrid superconductor-semiconductor devices and interconnected circuits. In such applications, the epitaxial growth of YBCO on silicon is extremely important. This thesis presents a systematic investigation of the fabrication and characterization of epitaxial YBCO thin films on silicon substrates with a double buffer of Eu CuO (ECO)/YSZ(Yttria-Stabilized Zirconia). Silicon (001) substrates 2 4 were prepared using a chemical etch by dilute HF acid prior to thin film deposition. The YBCO thin films were grown via an entirely in situ process using an on-axis rf magnetron sputtering method with optimized deposition parameters including the deposition temperature, operating pressure and partial oxygen pressure. The crystallinity, surface morphology, electrical properties, and interface of the obtained YBCO/ECO/YSZ thin films were studied by x-ray diffraction, surface profiler, atomic force microscope, optical microscope, standard dc four-probe measurements and small angle x-ray reflection. The X-ray diffraction patterns showed that all the thin films were highly c-axis oriented. A full width of 0.69 at half maximum of the YBCO(005) peak was obtained. This was smaller than reported in previous studies of YBCO thin films on double buffered silicon or nickel substrates. The atomic force microscopy image showed that the ECO buffer surface was flat and smooth. The average roughness over a wide scanning region of 2000m was less than 25nm. The optical microscope images showed that the surface morphology of the grown YBCO thin films was significantly improved by the ECO buffer layer since ECO had a very stable 214-T' crystal structure and very small lattice mismatch with YBCO. The YBCO/ECO/YSZ multilayers were further characterized by small angle x-ray reflection. The surface roughness of the YBCO layers decreased when an ECO buffer was added. No intermediate layer was found at the YBCO/ECO and ECO/YSZ interfaces. The results suggest that ECO is chemically compatible with YBCO and YSZ. The superconductivity of YBCO films was significantly improved by the ECO/YSZ double buffer. This is indicated by the fact that YBCO thin films on silicon substrates with an ECO/YSZ double buffer showed a higher T than that grown on YSZ/Si without the ECO layer. The advantages of using ECO/YSZ double buffer layers in deposition of YBCO on silicon were clearly demonstrated. It would provide a good basis for the potential applications of YBCO on other semiconductors, metallic or me
Characterization of Epitaxial Films
Author: Edward Bennett JoyPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages :
Book Description
Author: Zuoming Zhu