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Author: M. Á. Alario-Franco Publisher: ISBN: Category : Science Languages : en Pages : 512
Book Description
Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.
Author: M. Á. Alario-Franco Publisher: ISBN: Category : Science Languages : en Pages : 512
Book Description
Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.
Author: G A Webb Publisher: Royal Society of Chemistry ISBN: 1847553907 Category : Science Languages : en Pages : 619
Book Description
As a spectroscopic method, nuclear magnetic resonance (NMR) has seen spectacular growth over the past two decades, both as a technique and in its applications. Today the applications of NMR span a wide range of scientific disciplines, from physics to biology to medicine. Each volume of Nuclear Magnetic Resonance comprises a combination of annual and biennial reports which together provide comprehensive coverage of the literature on this topic. This Specialist Periodical Report reflects the growing volume of published work involving NMR techniques and applications, in particular NMR of natural macromolecules which is covered in two reports: "NMR of Proteins and Nucleic Acids" and "NMR of Carbohydrates, Lipids and Membranes". For those wanting to become rapidly acquainted with specific areas of NMR, this title provides unrivalled scope of coverage. Seasoned practitioners of NMR will find this an invaluable source of current methods and applications. Volume 33 covers literature published from June 2002 to May 2003. Specialist Periodical Reports provide systematic and detailed review coverage in major areas of chemical research. Compiled by teams of leading authorities in the relevant subject areas, the series creates a unique service for the active research chemist, with regular, in-depth accounts of progress in particular fields of chemistry. Subject coverage within different volumes of a given title is similar and publication is on an annual or biennial basis.
Author: Materials Research Society. Meeting Publisher: ISBN: Category : Science Languages : en Pages : 568
Book Description
Solid-state chemistry continues to span and to spawn multiple materials research areas, attracting investigators from chemistry, condensed-matter physics, materials science and engineering, ceramics, chemical engineering, and mineralogy/geology, to name a few. The common challenge is to understand and to predict structures and properties of new materials. As with earlier volumes in this series from the Materials Research Society, the presentations here represent interdisciplinary research from around the world and explore not only recent advances in the solid-state chemistry of inorganic materials, but also their impact on commercial applications. The book covers a broad range of topics, including synthesis and characterization of novel functional materials; design and fabrication of nanostructures and nanomaterials; crystal and structural chemistry; catalysis; gas separation and storage; and magnetic and optical applications. Both theoretical and computational studies of solid-state inorganic materials are featured. Joint presentations with solid-state ionics are also particularly fruitful.
Author: Mark I. Gardner Publisher: ISBN: Category : Computers Languages : en Pages : 408
Book Description
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
Author: Stephen E. Saddow Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 432
Book Description
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Author: D. G. Schlom Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 408
Book Description
This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.
Author: M. Á. Alario-Franco
Author: M. Á. Alario-Franco
Author: 
Author: G A Webb
Author: Philippe Knauth
Author: 
Author: Materials Research Society. Meeting
Author: 
Author: Mark I. Gardner
Author: Stephen E. Saddow
Author: D. G. Schlom