Author: Chih Yuan ChengPublisher:
ISBN:
Category :
Languages : en
Pages : 266
Book Description
Simulation of Sic MESFET Using Synopsys Sentaurus TCAD Tools for High Power and High Frequency Analysis
Author: Chih Yuan ChengModeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas
Author: Pushpakaran Bejoy NPublisher: World Scientific
ISBN: 9813237848
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.
Simulation of Silicon Carbide MESFET Using Analytical Modeling and Synopsis Software for High Power and High Frequency Performance
Author: Puneet PandeyDevice Physics, Modeling, Technology, and Analysis for Silicon MESFET
Author: Iraj Sadegh AmiriPublisher: Springer
ISBN: 3030045137
Category : Technology & Engineering
Languages : en
Pages : 122
Book Description
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Technology Computer Aided Design
Author: Chandan Kumar SarkarPublisher: CRC Press
ISBN: 1466512660
Category : Technology & Engineering
Languages : en
Pages : 462
Book Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Simulation of Silicon Carbide Metal Semiconductor Field Effect Transistor Using Analytical Modeling for High Frequency and Time Delay
Author: Dhyaneshwar MurugesanPublisher:
ISBN:
Category :
Languages : en
Pages : 182
Book Description
Simulation of Semiconductor Processes and Devices 2001
Author: Dimitris TsoukalasPublisher:
ISBN: 9783709162453
Category :
Languages : en
Pages : 476
Book Description
Simulation of Si CMES Using Synopsys Sentaurus Technology Computer Aided Design Tools
Author: Malav ShahPublisher:
ISBN:
Category : Computer-aided engineering
Languages : en
Pages : 108
Book Description
This paper is concentrated on the development of a complete complementary silicon MESFET technology.
A Physical Simulator for the Extraction of MESFET Circuit Models
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
We present a 2-D physical simulator intended for the computer-aided-design of GaAs MESFETs. Numerical schemes for DC and small-signal analysis are briefly described. Small-signal simulation of a submicron device is compared with on-wafer measurements.
Simulation of Semiconductor Processes and Devices 2007
Author: Tibor GrasserPublisher: Springer
ISBN: 9783709119112
Category : Technology & Engineering
Languages : en
Pages : 463
Book Description
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.