Silicon Selective Epitaxial Growth by Low Pressure Chemical Vapor Deposition PDF Download

Author: Yangchin Shih
Publisher:
ISBN:
Category :
Languages : en
Pages : 394

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Author:
Publisher: Elsevier
ISBN: 0080541003
Category : Science
Languages : en
Pages : 514

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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Author: Y. Pauleau
Publisher: Springer Science & Business Media
ISBN: 940100353X
Category : Technology & Engineering
Languages : en
Pages : 372

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An up-to-date collection of tutorial papers on the latest advances in the deposition and growth of thin films for micro and nano technologies. The emphasis is on fundamental aspects, principles and applications of deposition techniques used for the fabrication of micro and nano devices. The deposition of thin films is described, emphasising the gas phase and surface chemistry and its effects on the growth rates and properties of films. Gas-phase phenomena, surface chemistry, growth mechanisms and the modelling of deposition processes are thoroughly described and discussed to provide a clear understanding of the growth of thin films and microstructures via thermally activated, laser induced, photon assisted, ion beam assisted, and plasma enhanced vapour deposition processes. A handbook for engineers and scientists and an introduction for students of microelectronics.

Author: Theodore M. Besmann
Publisher: The Electrochemical Society
ISBN: 9781566771559
Category : Science
Languages : en
Pages : 922

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Author: K. Eberl
Publisher: Springer Science & Business Media
ISBN: 9401103410
Category : Technology & Engineering
Languages : en
Pages : 386

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Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995

Author: Kim Ho Yeap
Publisher: BoD – Books on Demand
ISBN: 1789234964
Category : Technology & Engineering
Languages : en
Pages : 162

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In this book, Complementary Metal Oxide Semiconductor ( CMOS ) devices are extensively discussed. The topics encompass the technology advancement in the fabrication process of metal oxide semiconductor field effect transistors or MOSFETs (which are the fundamental building blocks of CMOS devices) and the applications of transistors in the present and future eras. The book is intended to provide information on the latest technology development of CMOS to researchers, physicists, as well as engineers working in the field of semiconductor transistor manufacturing and design.

Author: Badih El-Kareh
Publisher: Springer Science & Business Media
ISBN: 1461522099
Category : Technology & Engineering
Languages : en
Pages : 605

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The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.

Author: Electrochemical Society. High Temperature Materials Division
Publisher: The Electrochemical Society
ISBN: 9781566771788
Category : Science
Languages : en
Pages : 1686

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Author: Guilei Wang
Publisher: Springer Nature
ISBN: 9811500460
Category : Technology & Engineering
Languages : en
Pages : 127

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This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Author: Mark Donald Allendorf
Publisher: The Electrochemical Society
ISBN: 9781566772785
Category : Technology & Engineering
Languages : en
Pages : 826

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