Silicides, Germanides, and Their Interfaces: Volume 320 PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Silicides, Germanides, and Their Interfaces: Volume 320 PDF full book. Access full book title Silicides, Germanides, and Their Interfaces: Volume 320 by Materials Research Society. Meeting Symposium D.. Download full books in PDF and EPUB format.
Author: Victor E. Borisenko Publisher: Springer Science & Business Media ISBN: 3642596495 Category : Technology & Engineering Languages : en Pages : 362
Book Description
A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices. A comprehensive presentation of thermodynamic and kinetic data is given in combination with their technical application, as is information on corresponding thin-film or bulk crystal formation techniques.
Author: Francois D'heurle Publisher: World Scientific ISBN: 9814492183 Category : Science Languages : en Pages : 390
Book Description
Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics.
Author: Bernhard Kramer Publisher: Springer ISBN: 3540449469 Category : Science Languages : en Pages : 637
Book Description
The 2001 Spring Meeting of the 65th Deutsche Physikalische Gesellschaft was held together with the 65. Physikertagung, in Hamburg, during the pe riod March 26 30 2001. With more than 3500 conference attendees, a record has again been achieved after several years of stabilisation in participation. This proves the continuing and now even increasing, attraction of solid state physics, especially for young colleagues who often discuss for the first time their scientific results in public at this meeting. More than 2600 scientific pa pers were presented orally, as well as posters, among them about 120 invited lectures from Germany and from abroad. This Volume 41 of "Advances in Solid State Physics" contains the written versions of half of the latter. We nevertheless hope that the book truly reflects the current state of the field. Amazingly enough, the majority of the papers as well as the discussions at the meeting, concentrated on the nanostructured solid state. This re flects the currently extremely intensive quest for developing the electronic and magnetic device generations of the future, which stimulates science be sides the challenge of the unknown as has always been the case since the very beginning of Solid State Physics about 100 years ago.
Author: R.S. Bauer Publisher: Elsevier ISBN: 0444600167 Category : Science Languages : en Pages : 663
Book Description
Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.
Author: Materials Research Society. Meeting Symposium D.
Author: Materials Research Society. Meeting Symposium D.
Author: Victor E. Borisenko
Author: Francois D'heurle
Author: Bernhard Kramer
Author: Marvin J. Weber
Author: John E. E. Baglin
Author: European Physical Society. Condensed Matter Division. General Conference
Author: R.S. Bauer
Author: European Physical Society. Condensed Matter Division. General Meeting
Author: