SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices PDF Download

Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1607685434
Category :
Languages : en
Pages : 1042

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Book Description

Author: Q. Liu
Publisher: The Electrochemical Society
ISBN: 1607688530
Category : Science
Languages : en
Pages : 450

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Book Description

Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066

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Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Author: David Harame
Publisher: The Electrochemical Society
ISBN: 1566776562
Category : Electronic apparatus and appliances
Languages : en
Pages : 1136

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Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Author: C. Claeys
Publisher: The Electrochemical Society
ISBN: 1566777445
Category : Integrated circuits
Languages : en
Pages : 547

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Book Description
ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).

Author: Laszlo Nanai
Publisher: BoD – Books on Demand
ISBN: 9535131435
Category : Science
Languages : en
Pages : 300

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Book Description
In recent years, scientific investigations and technological developments have resulted in many new results. Direct applications of quantum mechanical laws to system with length scales lower than 100 nm (nano) had opened a way to construction of new equipment in the field f.e. of nano- and optoelectronics. This book fits into this trend summarizing the results related to discoveries and technological applications of nanolayer in different fields of material science and even life science. The chapters are organized into three subfields: 1) Preparation and fabrications of nanolayers with different methods. 2) Description of recent achievements related to very important III-V heterostructures. 3) Descriptions of mechanical, thermal, optoelectronic, photocatalytic, and tribological properties of nanolayered structures. Some environmentally friendly applications are also treated in this book. The presented book provides a description of specific and original results obtained by authors. We hope that the volume will be of interest for a wide range of readers working in the field of material science.

Author: Günter Weimann
Publisher: CRC Press
ISBN: 9780750302951
Category : Technology & Engineering
Languages : en
Pages : 880

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Book Description
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.

Author: S. N. G. Chu
Publisher: The Electrochemical Society
ISBN: 9781566771498
Category : Technology & Engineering
Languages : en
Pages : 408

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Book Description

Author: Steafno Chiussi
Publisher: Netbiblo
ISBN: 8497454162
Category : Technology & Engineering
Languages : en
Pages : 162

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Book Description
The main objective of this International Workshop in Vigo is to target this major problem by bringing together scientists and engineers specialized on various different topics related to group IV semiconductors. In five consecutive sessions dedicated to - Group IV materials: CMOS and further extension of the roadmap - Group IV materials: Nano-photonics - Material aspects and characterization on nano-scale - Nanostructures and material processing on atomic scale

Author:
Publisher: Elsevier
ISBN: 0080541011
Category : Science
Languages : en
Pages : 333

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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.