Author: Wing Ling Liliean LaiPublisher:
ISBN:
Category : Atomic force microscopy
Languages : en
Pages : 502
Book Description
Si/SiO2 Interface Roughness Studies
Author: Wing Ling Liliean LaiPublisher:
ISBN:
Category : Atomic force microscopy
Languages : en
Pages : 502
Book Description
The Si/Sio2 Interface Roughness
Author: Xidong ChenThe Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Author: B.E. DealPublisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996
Author: Hisham Z. MassoudPublisher:
ISBN:
Category : Science
Languages : en
Pages : 804
Book Description
Sputter-Induced Roughness in Thermal SiO2 During Auger Sputter Profiling Studies of the Si-SIO2 Interface
Author: C. F Cook (Jr)The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000
Author: Hisham Z. MassoudPublisher:
ISBN:
Category : Nature
Languages : en
Pages : 562
Book Description
SI/SIO2 Interface Studies by Spectroscopic Immersion Ellipsometry and Atomic Force Microscopy
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
The dependence of the Si/Sio2 interface characteristics on the thickness and oxidation temperature for Sio2 films grown on different Si orientations was studied by spectroscopic immersion ellipsometry (SIE) and atomic force microscopy (AFM). Essentially, SIE uses liquids that-match to the refractive index of the films, thereby optically removing the films and consequently increasing the sensitivity to the interface. We show that as the thickness of the thermally grown SiO2 overlayer increases, the thickness of the suboxide layer at the interface also increases, and the average radius of the crystalline silicon protrusions (roughness) at the interface decreases for the three different Si orientations (100), (110) and (111), and two different oxidation temperatures (800 deg C and 1000 deg C) studied. The dependence of the interface roughness on the thickness of the SiO2 overlayer was confirmed by AFM. The results include unintentionally and intentionally roughened Si samples and are shown to be consistent with the commonly accepted Si oxidation model. Thickness, Oxidation, Atomic, Immersion.
A Study of Si/SiO2 Interface Roughness Evolution During Microwave Electron Cyclotron Resonance Plasma and Thermal Oxidation Processes
Author: Changyi ZhaoPublisher:
ISBN:
Category : Cyclotron resonance
Languages : en
Pages : 388
Book Description
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Author: B.E. DealPublisher: Springer Science & Business Media
ISBN: 1489907742
Category : Science
Languages : en
Pages : 543
Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Influence of the Atomic Roughness at the Si-Si-O2 Interface
Author: M. HenzlerPublisher:
ISBN:
Category :
Languages : en
Pages : 32
Book Description
Special MOS-FET's have been prepared to check a correlation between the atomic roughness at the Si/SiO2 interface (as determined by the novel technique of spot profile analysis in the LEED pattern, SPA-LEED) and the electronic mobility in the MOS-device. The transistors have been tested in the temperature range from room temperature down to liquid helium (4 K). Four different sets of transistors with different roughness have been prepared. The roughness has been determinated at large areas with gate oxide on the same chip (without transistor structures, however). Preliminary measurements of mobility show the predicted correlation between roughness and mobility. (Author).