Semiconductors Investigated by Time Resolved Raman Absorption and Photoluminescence Spectroscopy Using Femtoseond and Picosecond Laser Techniques PDF Download
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Author: R. R. Alfano Publisher: ISBN: Category : Languages : en Pages : 10
Book Description
We report on the research performed during the period 1982-1983 under the auspices of AFOSR. The research effort follows two directions: (1) laser development: subpicosecond laser, application of anti-resonant cavity to Nd:glass, study of the emerald laser, and study of a new mode-locking dye for shorter pulses. (2) Time-resolved fluorescence and absorption studies of CdCr2Se4, GaAs and Ga(0,5)In(0.5)P with the goal to understand the interaction and kinetics of photogenerated carriers and basic assignments of the valence-conduction band transitions (CdCr2Se4). We have also investigated the dynamics of semi-insulating CdSe. Finally we have continued the research on radiation damage (neutrons and protons) in CdSe and GaAs. (Author).
Author: R. R. Alfano Publisher: ISBN: Category : Languages : en Pages : 10
Book Description
We report on the research performed during the period 1982-1983 under the auspices of AFOSR. The research effort follows two directions: (1) laser development: subpicosecond laser, application of anti-resonant cavity to Nd:glass, study of the emerald laser, and study of a new mode-locking dye for shorter pulses. (2) Time-resolved fluorescence and absorption studies of CdCr2Se4, GaAs and Ga(0,5)In(0.5)P with the goal to understand the interaction and kinetics of photogenerated carriers and basic assignments of the valence-conduction band transitions (CdCr2Se4). We have also investigated the dynamics of semi-insulating CdSe. Finally we have continued the research on radiation damage (neutrons and protons) in CdSe and GaAs. (Author).
Author: Robert R. Alfano Publisher: ISBN: Category : Languages : en Pages : 19
Book Description
Four major accomplishments have been achieved to help further the development of faster photonic and electronic devices. 1. We have shown theoretically and experimentally how one can determine accurately one of the most important parameters in microstructures: the bandgap discontinuity in valence and conduction bands at the heterojunction from the photoluminescence measurements for ultrathin wells in the range of 15 to 80 A for GaAs/AlGaAs and GaInAs/AlInAs structures. 2. A model was developed using the electron degeneracy to describe the much slower carrier - optical phonon loss relaxation rate measurements in 2D as compared to 3D. 3. The valence and conduction band deformation potentials were separately determined for the first time in semi magnetic semiconductor alloys of Cd(1-x)Mn(x)Se from the shift in photoluminescence spectra versus x. The valence band deformation potential of wurtzite crystals is much larger compared to the one in zinc blende. This technique measures separately the values of valence and conduction band deformation potential instead of the difference between them. 4. The direct picosecond spin dephasing time and degree of spin alignment of photoexcited electrons in semi-magnetic semiconductor alloys of Cd(1-x)Mn(x)Se was measured. The fast dephasing times arise from the spin exchange between free carriers and the localized Mn+ ions.
Author: Publisher: ISBN: Category : Aeronautics Languages : en Pages : 1390
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Publisher: ISBN: Category : Research Languages : en Pages : 1168
Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
Author: R. R. Alfano
Author: R. R. Alfano
Author: Robert R. Alfano
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Author: Lianhe Li
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