Author: J Pollman
Publisher: World Scientific
ISBN: 9814552399
Category :
Languages : en
Pages : 818
Book Description
Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference
Author: J Pollman
Publisher: World Scientific
ISBN: 9814552399
Category :
Languages : en
Pages : 818
Book Description
Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
Publisher: World Scientific
ISBN: 9814552399
Category :
Languages : en
Pages : 818
Book Description
Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
Scientific and Technical Aerospace Reports
Electronic Properties of Semiconductor Interfaces
Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 9783540202158
Category : Science
Languages : en
Pages : 280
Book Description
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Publisher: Springer Science & Business Media
ISBN: 9783540202158
Category : Science
Languages : en
Pages : 280
Book Description
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
The Electronic Properties of Semiconductors, Semiconductor-simple Metal Interfaces, and Transition Metal Alloys
Author: Jeffrey Steven Nelson
Publisher:
ISBN:
Category :
Languages : en
Pages : 200
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 200
Book Description
Proceedings of the 17th International Conference on the Physics of Semiconductors
Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580
Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580
Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Control of Semiconductor Interfaces
Author: I. Ohdomari
Publisher: Elsevier
ISBN: 1483290484
Category : Science
Languages : en
Pages : 600
Book Description
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
Publisher: Elsevier
ISBN: 1483290484
Category : Science
Languages : en
Pages : 600
Book Description
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
Electron Microscopy and Analysis 1999
Author: C. J. Kiely
Publisher: CRC Press
ISBN: 9780750305778
Category : Science
Languages : en
Pages : 1320
Book Description
Electron Microscopy and Analysis 1999 provides an overview of recent developments and outlines opportunities for future research in electron microscopy. The book presents the wide-ranging applications of these techniques in materials science, metallurgy, and surface science. It is an authoritative reference for academics and researchers working in materials science, instrumentation, electron optics, and condensed matter physics.
Publisher: CRC Press
ISBN: 9780750305778
Category : Science
Languages : en
Pages : 1320
Book Description
Electron Microscopy and Analysis 1999 provides an overview of recent developments and outlines opportunities for future research in electron microscopy. The book presents the wide-ranging applications of these techniques in materials science, metallurgy, and surface science. It is an authoritative reference for academics and researchers working in materials science, instrumentation, electron optics, and condensed matter physics.
Conjugated Polymer And Molecular Interfaces
Author: William R. Salaneck
Publisher: CRC Press
ISBN: 9780203910870
Category : Science
Languages : en
Pages : 896
Book Description
Defines the state-of-the-art in interface science for electronic applications of organic materials. Updates understanding of the foundaiton of interfacial properties. Describes novel electronic devices created from conjugated polymers and organic molecular solids.
Publisher: CRC Press
ISBN: 9780203910870
Category : Science
Languages : en
Pages : 896
Book Description
Defines the state-of-the-art in interface science for electronic applications of organic materials. Updates understanding of the foundaiton of interfacial properties. Describes novel electronic devices created from conjugated polymers and organic molecular solids.
Energy Research Abstracts
Electron Energy Loss Spectroscopy and Surface Vibrations
Author: H. Ibach
Publisher: Academic Press
ISBN: 1483259455
Category : Science
Languages : en
Pages : 379
Book Description
Electron Energy Loss Spectroscopy and Surface Vibrations is devoted to electron energy loss spectroscopy as a probe of the crystal surface. Electrons with energy in the range of a few electron volts sample only a few atomic layers. As they approach or exit from the crystal, they interact with the vibrational modes of the crystal surface, or possibly with other elementary excitations localized there. The energy spectrum of electrons back-reflected from the surface is thus a rich source of information on its dynamics. The book opens with a detailed analysis of the physics that controls the operation of the monochromator, which is the core of the experimental apparatus. Separate chapters follow on the interaction of electrons with vibrational modes of the surface region and with other elementary excitations in the vicinity; the lattice dynamics of clean and adsorbate-covered surfaces, with emphasis on those features of particular relevance to surface vibrational spectroscopy; and selected applications vibration spectroscopy in surface physics and chemistry.
Publisher: Academic Press
ISBN: 1483259455
Category : Science
Languages : en
Pages : 379
Book Description
Electron Energy Loss Spectroscopy and Surface Vibrations is devoted to electron energy loss spectroscopy as a probe of the crystal surface. Electrons with energy in the range of a few electron volts sample only a few atomic layers. As they approach or exit from the crystal, they interact with the vibrational modes of the crystal surface, or possibly with other elementary excitations localized there. The energy spectrum of electrons back-reflected from the surface is thus a rich source of information on its dynamics. The book opens with a detailed analysis of the physics that controls the operation of the monochromator, which is the core of the experimental apparatus. Separate chapters follow on the interaction of electrons with vibrational modes of the surface region and with other elementary excitations in the vicinity; the lattice dynamics of clean and adsorbate-covered surfaces, with emphasis on those features of particular relevance to surface vibrational spectroscopy; and selected applications vibration spectroscopy in surface physics and chemistry.