Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS PDF Download

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Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS

Author: Nemanja Pešović
Publisher:
ISBN:
Category :
Languages : en
Pages : 149

Book Description
Keywords: selective, epitaxy, sige, source, drain, MOSFET, transistor.

Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS

Author: Nemanja Pešović
Publisher:
ISBN:
Category :
Languages : en
Pages : 149

Book Description
Keywords: selective, epitaxy, sige, source, drain, MOSFET, transistor.

Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-Germanium Films from Disilane, Germane and Chlorine for Source/ Drain Junctions of Nanoscale CMOS.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
As metal-oxide semiconductor field effect transistors (MOSFETs) are scaled for higher speed and reduced power, new challenges are imposed on the source/drain junctions and their contacts. Future junction technologies are required to produce ultra-shallow junctions with junction depths as low as 4 nm, above-equilibrium dopant activation, super-abrupt doping profiles and specific contact resistivity values below 1x10− & 8312; &!cm2. Recently, selectively deposited, boron doped Si1−[subscript x]Ge[subscript x] junctions have been proposed to overcome these challenges. Success of technology relies on selective chemical vapor deposition of the process and satisfying stringent requirements for process integration. In the present work, the effects of process conditions on selective deposition of heavily boron doped Si1−[subscript x]Ge[subscript x] is investigated using Si2H6 and GeH4 as the precursors. It was found that addition of large amounts of diborane resulted in selectivity degradation. Addition of chlorine improved selectivity for both doped and undoped Si1−[subscript x]Ge[subscript x] depositions. It was shown that addition of chlorine to the undoped Si1−Ge[subscript x] deposition chemistry resulted in reduced surface roughness. It is proposed that chlorine preferentially segregates to the surface of the deposited films, and act as the surfactant. However, it was also found that addition of chlorine did not significantly impact the surface morphology of heavily boron doped Si1−Ge[subscript x]. It was shown that addition of chlorine strongly interfered with Ge and B incorporation. Furthermore, it was found that chlorine resulted in enhanced Ge but reduced B incorporation. It is proposed that chlorine adsorption on the growing surfaces reduced the available sites for boron while promoting SiCl2 desorption at lower temperatures. Increase in deposition temperature for a.

Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS PDF Download

Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS

Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS

Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-Germanium Films from Disilane, Germane and Chlorine for Source/ Drain Junctions of Nanoscale CMOS.

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