Selected Energy Epitaxial Deposition (SEED) and Low Energy Electron Microscopy (LEEM) of AlN, GaN and SiC Thin Films PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
The report objectives are: * Optimize low-temperature growth of GaN using seeded supersonic molecular beams of NH3 and triethylgallium (TEG). * Determine the optimum growth parameters by conducting in situ real-time observations of the heteroepitaxial growth of GaN(0001) on 6H-SiC(0001) substrates using the SSJ source seeded with NH3 with the low-energy electron microscope (LEEM). * Investigate effects of precursor translational energy on growth kinetics and morphology of GaN films.
Author: Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
The report objectives are: * Optimize low-temperature growth of GaN using seeded supersonic molecular beams of NH3 and triethylgallium (TEG). * Determine the optimum growth parameters by conducting in situ real-time observations of the heteroepitaxial growth of GaN(0001) on 6H-SiC(0001) substrates using the SSJ source seeded with NH3 with the low-energy electron microscope (LEEM). * Investigate effects of precursor translational energy on growth kinetics and morphology of GaN films.
Author: Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
The report objectives are: * Optimize low-temperature growth of GaN using seeded supersonic molecular beams of NH3 and triethylgallium (TEG). * Determine the optimum growth parameters by conducting in situ real-time observations of the heteroepitaxial growth of GaN(0001) on 6H-SiC(0001) substrates using the SSJ source seeded with NH3 with the low-energy electron microscope (LEEM). * Investigate effects of precursor translational energy on growth kinetics and morphology of GaN films.
Author: Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
Epitaxial AIN films were grown on as-received and hydrogen etched 6H-SiC(00Ol) substrates using an ammonia supersonic seeded beam. The films on the latter substrates exhibited a higher degree of order. Cross-sectional electron microscopy revealed sharper SiC-AiN interfaces with extended flat terraces. The few stacking mismatch boundaries originated from the 1.5 nm steps corresponding to the 6H stacking sequence. in situ LEEM/LEED studies were conducted on GaN homoepitaxial growth on MOCVD GaN substrates by plasma-assisted gas-source MBE. After 6 hours of growth at 6600C, LEEM images showed a GaN layer with a hexagonal parquet structure and a large number of dark spots on the surface. Ex situ AFM studies revealed that the former was a result of spiral growth and the latter were due to surface pits of hexagonal shape. The surface density of the pits is l-2x1O9 CZn. 2. In situ cleaning of MOCVD-grown GaN/AlN/6H-SiC substrates using NH3-seeded supersonic molecular beams was investigated. Complete oxygen removal was achieved by heating in vacuum at 73O0C. Surface carbon concentrations of -3%, as evidenced by xPS, were achieved by heating at 73O0C under a hyperthermal NH3 flux. Modifications have been made to the SEE system to provide a cleaner vacuum ambient and are detailed in this report A new substrate holder was fabricated that uses Mo clips and a polished Mo block to ensure good thermal contact without Ag paste. Outgassing of the colloidal Ag paste is believed to be one source of carbon contamination at high temperatures. The design of the N plasma source and testing chamber is also reported.
Author: Publisher: Elsevier ISBN: 0080532675 Category : Science Languages : en Pages : 673
Book Description
Although there has been steady progress in understanding aspects of epitaxial growth throughout the last 30 years of modern surface science, work in this area has intensified greatly in the last 5 years. A number of factors have contributed to this expansion. One has been the general trend in surface science to tackle problems of increasing complexity as confidence is gained in the methodology, so for example, the role of oxide/metal interfaces in determining the properties of many practical supported catalysts is now being explored in greater detail. A second factor is the recognition of the potential importance of artificial multilayer materials not only in semiconductor devices but also in metal/metal systems because of their novel magnetic properties. Perhaps even more important than either of these application areas, however, is the newly-discovered power of scanning probe microscopies, and most notably scanning tunneling microscopy (STM), to provide the means to study epitaxial growth phenomena on an atomic scale under a wide range of conditions. These techniques have also contributed to revitalised interest in methods of fabricating and exploiting artificial structures (lateral as well as in layers) on a nanometre scale.This volume, on Growth and Properties of Ultrathin Epitaxial Layers, includes a collection of articles which reflects the present state of activity in this field. The emphasis is on metals and oxides rather than semiconductors.
Author: James S. Speck Publisher: ISBN: Category : Science Languages : en Pages : 588
Book Description
Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Author: Takashi Hariu Publisher: World Scientific ISBN: 9789971508395 Category : Technology & Engineering Languages : en Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
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Author: James S. Speck
Author: Albert-László Barabási
Author: Takashi Hariu
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