Author: Joseph Raymond RistorcelliPublisher:
ISBN:
Category :
Languages : en
Pages : 584
Book Description
Second Order Turbulence Simulation of the Rotating, Buoyant, Recirculating Convection in the Czochralski Crystal Melt
Author: Joseph Raymond RistorcelliPublisher:
ISBN:
Category :
Languages : en
Pages : 584
Book Description
Scientific and Technical Aerospace Reports
Author: Transport Phenomena in Food Processing, First International Conference Proceedings
Author: Selcuk GuceriPublisher: CRC Press
ISBN: 9781566760058
Category : Technology & Engineering
Languages : en
Pages : 1618
Book Description
Workshop on Engineering Turbulence Modeling
Author: Toward a Turbulence Constitutive Relation for Rotating Flows
Author: Synopsis of a Rapid Pressure Model Materially Frame Indifferent in the 2D Limit
Author: Joseph Raymond RistorcelliPublisher:
ISBN:
Category : Fluid dynamics
Languages : en
Pages : 46
Book Description
NASA Conference Publication
Author: Government Reports Announcements & Index
Author: Government Reports Annual Index
Author: Publisher:
ISBN:
Category : Research
Languages : en
Pages : 1220
Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
Crystal Growth and Evaluation of Silicon for VLSI and ULSI
Author: Golla ErannaPublisher: CRC Press
ISBN: 1482232812
Category : Science
Languages : en
Pages : 432
Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.