Second Breakdown in Semiconductor Devices PDF Download

Author: Harry A. Schafft
Publisher:
ISBN:
Category : Semiconductor storage devices
Languages : en
Pages : 48

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Book Description

Author: Simon M. Sze
Publisher: John Wiley & Sons
ISBN: 0470068302
Category : Technology & Engineering
Languages : en
Pages : 828

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Book Description
The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.

Author: Michael Levinshtein
Publisher: World Scientific
ISBN: 9812563954
Category : Technology & Engineering
Languages : en
Pages : 223

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Book Description
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.

Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 52

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Book Description

Author: Harry A. Schafft
Publisher:
ISBN:
Category : Semiconductor storage devices
Languages : en
Pages : 48

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Book Description
Almost 200 references with appropriate key words are listed which provide, it is believed, a comprehensive coverage of the literature of second breakdown in transistors and other semiconductor devices from 1958 through much of 1967.A representative list of earlier papers dealing with what appears to be second breakdown in point-contact and p-n junction diodes is also included.The indexes consist of an author index and an index to subject matter with reference tabulations and with key word assignments.(Author).

Author: W. Murray Bullis
Publisher:
ISBN:
Category : Semiconductor industry
Languages : en
Pages : 28

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Author:
Publisher:
ISBN:
Category : Physical instruments
Languages : en
Pages : 28

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Book Description

Author: Vladislav A. Vashchenko
Publisher: Springer Science & Business Media
ISBN: 0387745149
Category : Technology & Engineering
Languages : en
Pages : 337

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Book Description
Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 408

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Book Description

Author: David R. Lide
Publisher: CRC Press
ISBN: 1351077848
Category : Science
Languages : en
Pages : 396

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Book Description
Established by Congress in 1901, the National Bureau of Standards (NBS), now the National Institute of Standards and Technology (NIST), has a long and distinguished history as the custodian and disseminator of the United States' standards of physical measurement. Having reached its centennial anniversary, the NBS/NIST reflects on and celebrates its first century with this book describing some of its seminal contributions to science and technology. Within these pages are 102 vignettes that describe some of the Institute's classic publications. Each vignette relates the context in which the publication appeared, its impact on science, technology, and the general public, and brief details about the lives and work of the authors. The groundbreaking works depicted include: A breakthrough paper on laser-cooling of atoms below the Doppler limit, which led to the award of the 1997 Nobel Prize for Physics to William D. Phillips The official report on the development of the radio proximity fuse, one of the most important new weapons of World War II The 1932 paper reporting the discovery of deuterium in experiments that led to Harold Urey's1934 Nobel Prize for Chemistry A review of the development of the SEAC, the first digital computer to employ stored programs and the first to process images in digital form The first paper demonstrating that parity is not conserved in nuclear physics, a result that shattered a fundamental concept of theoretical physics and led to a Nobel Prize for T. D. Lee and C. Y. Yang "Observation of Bose-Einstein Condensation in a Dilute Atomic Vapor," a 1995 paper that has already opened vast new areas of research A landmark contribution to the field of protein crystallography by Wlodawer and coworkers on the use of joint x-ray and neutron diffraction to determine the structure of proteins