Author: Dongsun KimPublisher:
ISBN:
Category :
Languages : en
Pages : 408
Book Description
Room Temperature Deposition of Amorphous Hydrogenated Silicon Carbide by Ion-assisted Plasma Enhanced Chemical Vapor Deposition
Author: Dongsun KimAmorphous Hydrogenated Silicon Carbide by Plasma Enhanced Chemical Vapor Deposition for Metal Matrix Composite Applications
Author: Howard Smith LandisPhysics and Technology of Silicon Carbide Devices
Author: Yasuto HijikataPublisher: BoD – Books on Demand
ISBN: 9535109170
Category : Science
Languages : en
Pages : 416
Book Description
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Plasma Deposition of Amorphous Silicon-Based Materials
Author: Pio CapezzutoPublisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Stoichiometric Hydrogenated Amorphous Silicon Carbide Thin Film Synthesis Using DC-saddle Plasma Enhanced Chemical Vapour Deposition
Author: Behzad Jazizadeh KarimiScientific and Technical Aerospace Reports
Author: Growth and Characterization of Hydrogenated Amorphous Silicon Prepared Using a Combined Hot Wire and Electron Cyclotron Resonance Plasma Deposition Technique
Author: Matthew Alan RingPublisher:
ISBN:
Category :
Languages : en
Pages : 94
Book Description
Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.
Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Inclusions
Author: Siri Suzanne ThompsonPublisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
Hydrogenated Amorphous Silicon Alloy Deposition Processes
Author: Werner LuftPublisher: CRC Press
ISBN: 9780824791469
Category : Science
Languages : en
Pages : 344
Book Description
This reference reviews common film and plasma diagnostic techniques and the deposition and film properties of various hydrogenated amorphous silicon alloys (a-Si:H).;Drawing heavily from studies on a-Si:H solar cells and offering valuable insights into other semiconductor applications of a-Si:H and related alloys, Hydrogenated Amorphous Silicon Alloy Deposition Processes: describes conventional as well as alternative, deposition processes and compares the resulting material properties; systematically categorizes various a-Si:H deposition techniques; details the characteristics of a-Si:H and related alloys with both high and low optical bandgap, including a-SiC:H, a-SiGe:H, and a-SiSn:H; discusses basic designs of glow discharge deposition reactors; evaluates the etching properties of amorphous silicon-based alloys; and examines microcrystalline silicon and silicon carbide.;Providing over 825 literature citations for further study, Hydrogenated Amorphous Silicon Alloy Deposition Processes is an incomparable resource for physicists; materials scientists; chemical, process and production engineers; electrical engineers and technicians in the semiconductor industry; and upper-level undergraduate and graduate students in these disciplines.
Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Silicon Carbide Films from Novel Precursors
Author: Steven Walton RyndersPublisher:
ISBN:
Category :
Languages : en
Pages : 742
Book Description
The influences of precursor molecular structure and electronic properties on the molecular structure, stoichiometry, and optical properties of a-SiC:H alloy films prepared through plasma enhanced chemical vapor deposition were investigated using infrared spectroscopy, ultraviolet-visible absorption spectroscopy, and sputtered neutral atom mass spectrometry (SNMS). Members of the homologous series tetramethylsilane (TeMS), trimethylsilane (TrMS), and dimethylsilane (DMS) as well as methane-silane (MS) were characterized as a-SiC:H precursors. Film structure, optical properties, and stoichiometry were studied as a function of precursor structure and deposition conditions, with deposition pressure serving as the manipulated variable. The infrared spectra of films prepared from the alkylsilane precursors revealed a strong dependence of the film structure on the deposition pressure, with high pressures ($>$0.1 torr) producing linear, polymeric films, and low pressures ($