Author: Tanja R. DardenPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 154
Book Description
Remote Plasma Enhanced Chemical Vapor Deposition of Amorphous Hydrogenated Silicon Carbon Alloys
Author: Tanja R. DardenPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 154
Book Description
Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Inclusions
Author: Siri Suzanne ThompsonPublisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
Plasma Deposition of Amorphous Silicon-Based Materials
Author: Pio CapezzutoPublisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-enhanced Chemical-vapor Deposition (remote PECVD)
Author: Study of Plasma Enhanced Chemical Vapor Deposition of Boron-doped Hydrogenated Amorphous Silicon Thin Films and the Application to P-channel Thin Film Transistor
Author: Helinda NominandaCharacterization of Amorphous Hydrogenated Carbon (a-C:H) from Plasma Assisted Chemical Vapor Deposition
Author: Karen Margaret CarrPlasma Deposition of Amorphous Silicon-based Materials
Author: Giovanni BrunoPublisher:
ISBN: 9780121379407
Category : Science
Languages : en
Pages : 324
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Laser Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon
Author: R. BilenchiThin-Film Silicon Solar Cells
Author: Arvind Victor ShahPublisher: CRC Press
ISBN: 1439808104
Category : Science
Languages : en
Pages : 438
Book Description
Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, startin
Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Silicon Carbide Films from Novel Precursors
Author: Steven Walton RyndersPublisher:
ISBN:
Category :
Languages : en
Pages : 742
Book Description
The influences of precursor molecular structure and electronic properties on the molecular structure, stoichiometry, and optical properties of a-SiC:H alloy films prepared through plasma enhanced chemical vapor deposition were investigated using infrared spectroscopy, ultraviolet-visible absorption spectroscopy, and sputtered neutral atom mass spectrometry (SNMS). Members of the homologous series tetramethylsilane (TeMS), trimethylsilane (TrMS), and dimethylsilane (DMS) as well as methane-silane (MS) were characterized as a-SiC:H precursors. Film structure, optical properties, and stoichiometry were studied as a function of precursor structure and deposition conditions, with deposition pressure serving as the manipulated variable. The infrared spectra of films prepared from the alkylsilane precursors revealed a strong dependence of the film structure on the deposition pressure, with high pressures ($>$0.1 torr) producing linear, polymeric films, and low pressures ($