Author: Ramy A. ShannyPublisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 16
Book Description
Remarks on Collisional Damping of Plasma Oscillations
Author: Ramy A. ShannyPublisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 16
Book Description
Nuclear Science Abstracts
Author: Scientific and Technical Aerospace Reports
Author: Plasma Physics and Engineering
Author: Alexander FridmanPublisher: CRC Press
ISBN: 9781560328483
Category : Science
Languages : en
Pages : 888
Book Description
Plasma engineering is a rapidly expanding area of science and technology with increasing numbers of engineers using plasma processes over a wide range of applications. An essential tool for understanding this dynamic field, Plasma Physics and Engineering provides a clear, fundamental introduction to virtually all aspects of modern plasma science and technology, including plasma chemistry and engineering, combustion, chemical physics, lasers, electronics, methods of material treatment, fuel conversion, and environmental control. The book contains an extensive database on plasma kinetics and thermodynamics, many helpful numerical formulas for practical calculations, and an array of problems and concept questions.
Fusion Energy Update
Author: NASA Technical Report
Author: United States. National Aeronautics and Space AdministrationPublisher:
ISBN:
Category : Aerodynamics
Languages : en
Pages : 822
Book Description
ERDA Energy Research Abstracts
Author: United States. Energy Research and Development AdministrationPublisher:
ISBN:
Category : Medicine
Languages : en
Pages : 994
Book Description
Picosecond Electronics and Optoelectronics
Author: Gerard A. MourouPublisher: Springer Science & Business Media
ISBN: 3642707807
Category : Technology & Engineering
Languages : en
Pages : 267
Book Description
Over the past decade, we have witnessed a number of spectacular advances in the fabrication of crystalline semiconductor devices due mainly to the pro gress of the different techni ques of heteroepitaxy. The di scovery of two dimensional behavior of electrons led to the development of a new breed of ultrafast electronic and optical devices, such as modulation doped FETs, permeable base transistors, and double heterojunction transistors. Comparable progress has been made in the domain of cryoelectronics, ultrashort pulse generation, and ultrafast diagnostics. Dye lasers can generate 8 fs signals after compression, diode lasers can be modulated at speeds close to 20 GHz and electrical signals are characterized with subpicosecond accuracy via the electro-optic effect. Presently, we are experiencing an important interplay between the field of optics and electronics; the purpose of this meeting was to foster and enhance the interaction between the two disciplines. It was logical to start the conference by presenting to the two different audiences, i. e. , electronics and optics, the state-of-the-art in the two res pective fields and to highlight the importance of optical techniques in the analysis of physical processes and device performances. One of the leading techniques in this area is the electro-optic sampling technique. This optical technique has been used to characterize transmission lines and GaAs devices. Carrier transport in semiconductors is of fundamental importance and some of its important aspects are stressed in these proceedings.
Soviet Physics, Doklady
Author: Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides
Author: Hadis MorkoçPublisher: John Wiley & Sons
ISBN: 3527628428
Category : Technology & Engineering
Languages : en
Pages : 883
Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.