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Author: Farid Medjdoub Publisher: MDPI ISBN: 3036505660 Category : Technology & Engineering Languages : en Pages : 242
Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Author: Farid Medjdoub Publisher: MDPI ISBN: 3036505660 Category : Technology & Engineering Languages : en Pages : 242
Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Author: Krzysztof Iniewski Publisher: CRC Press ISBN: 1351833359 Category : Technology & Engineering Languages : en Pages : 602
Book Description
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Author: Matteo Meneghini Publisher: Springer ISBN: 3319431994 Category : Technology & Engineering Languages : en Pages : 383
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author: Alex Lidow Publisher: John Wiley & Sons ISBN: 1119594146 Category : Science Languages : en Pages : 389
Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author: George D. Vendelin Publisher: John Wiley & Sons ISBN: 0471715824 Category : Technology & Engineering Languages : en Pages : 1080
Book Description
The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.
Author: Narendra Kumar Publisher: Artech House ISBN: 1608078329 Category : Technology & Engineering Languages : en Pages : 365
Book Description
This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Author: Stephen J. Pearton Publisher: CRC Press ISBN: 1000448428 Category : Science Languages : en Pages : 556
Book Description
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Author: Earl McCune Publisher: Cambridge University Press ISBN: 1107059178 Category : Technology & Engineering Languages : en Pages : 495
Book Description
"Power is dissipated (lost) when this current flows through any resistance, which includes the amplifier's transistor. This dissipated power is the product of the current in the load times the voltage difference between the supply voltage to the amplifier and the output signal voltage. When the voltage supplied to the amplifier is a constant value, and by far the most common design practice, the situation in Fig. 1-2a results. Power dissipation in the amplifier is maximum when the output signal voltage is 1/2 of the supply voltage. When the output signal voltage is higher, even though the current value is larger the voltage drop is less and the power dissipation is lower. Similarly, when the output signal voltage is small, even though the voltage drop is now large the current in the load is smaller and again the power dissipation is lower"--
Author: Marin Alexe Publisher: Springer Science & Business Media ISBN: 9783540210498 Category : Science Languages : en Pages : 524
Book Description
During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Author: Farid Medjdoub
Author: Farid Medjdoub
Author: Krzysztof Iniewski
Author: Matteo Meneghini
Author: Alex Lidow
Author: George D. Vendelin
Author: Electrochemical Society
Author: Narendra Kumar
Author: Stephen J. Pearton
Author: Earl McCune
Author: Marin Alexe