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Author: Wolfgang Braun Publisher: Springer Science & Business Media ISBN: 9783540651994 Category : Science Languages : en Pages : 240
Book Description
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.
Author: Wolfgang Braun Publisher: Springer Science & Business Media ISBN: 9783540651994 Category : Science Languages : en Pages : 240
Book Description
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.
Author: P.K. Larsen Publisher: Springer Science & Business Media ISBN: 146845580X Category : Science Languages : en Pages : 526
Book Description
This volume contains the papers presented at the NATO Advanced Research Workshop in "Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces" held at the Koningshof conference center, Veldhoven, the Netherlands, June 15-19, 1987. The main topics of the workshop, Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Microscopy (REM), have a common basis in the diffraction processes which high energy electrons undergo when they interact with solid surfaces at grazing angles. However, while REM is a new technique developed on the basis of recent advances in transmission electron microscopy, RHEED is an old method in surface crystallography going back to the discovery of electron diffraction in 1927 by Davisson and Germer. Until the development of ultra high vacuum techniques in the 1960's made instruments using slow electrons more accessable, RHEED was the dominating electron diffraction technique. Since then and until recently the method of Low Energy Electron Diffraction (LEED) largely surpassed RHEED in popularity in surface studies. The two methods are closely related of course, each with its own specific advantages. The grazing angle geometry of RHEED has now become a very useful feature because this makes it ideally suited for combination with the thin growth technique of Molecular Beam Epitaxy (MBE). This combination allows in-situ studies of freshly grown and even growing surfaces, opening up new areas of research of both fundamental and technological importance.
Author: Claude Weisbuch Publisher: Springer Science & Business Media ISBN: 1475700911 Category : Science Languages : en Pages : 414
Book Description
Low-dimensional materials are of fundamental interest in physics and chemistry and have also found a wide variety of technological applica tions in fields ranging from microelectronics to optics. Since 1986, several seminars and summer schools devoted to low-dimensional systems have been supported by NATO. The present one, Physics, Fabrication and Applications of Multilayered structures, brought together specialists from different fields in order to review fabrication techniques, charac terization methods, physics and applications. Artificially layered materials are attractive because alternately layering two (or more) elements, by evaporation or sputtering, is a way to obtain new materials with (hopefully) new physical properties that pure materials or alloys do not allow. These new possibilities can be ob tained in electronic transport, optics, magnetism or the reflectivity of x-rays and slow neutrons. By changing the components and the thickness of the layers one can track continuously how the new properties appear and follow the importance of the multilayer structure of the materials. In addition, with their large number of interfaces the study of inter face properties becomes easier in multilayered structures than in mono layers or bilayers. As a rule, the role of the interface quality, and also the coupling between layers, increases as the thickness of the layer decreases. Several applications at the development stage require layer thicknesses of just a few atomic layers.
Author: Hajime Asahi Publisher: John Wiley & Sons ISBN: 111935501X Category : Science Languages : en Pages : 510
Book Description
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Author: Wolfgang Braun
Author: Wolfgang Braun
Author: Ayahiko Ichimiya
Author: Jan Paul Antoni Van der Wagt
Author: P.K. Larsen
Author: Jay Samuel Resh
Author: Gunther Springholz
Author: Wolfgang Braun
Author: Claude Weisbuch
Author: Wolfgang Braun
Author: Hajime Asahi