Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys PDF Download

Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys PDF full book. Access full book title Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys by Marvin Silver. Download full books in PDF and EPUB format.

Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys

Author: Marvin Silver
Publisher:
ISBN:
Category : Electroluminescence
Languages : en
Pages : 0

Book Description

Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys

Author: Marvin Silver
Publisher:
ISBN:
Category : Electroluminescence
Languages : en
Pages : 0

Book Description

Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys. Annual Subcontract Report, 1 February 1992--31 January 1993

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
This report describes work during the second year of a continuing research study. The work is designed to help us understand how recombination, trapping, and band-mobility modification affecting the electronic properties of amorphous semiconductors can be measured, characterized, and described by an appropriate spectrum of defect states. We also worked to determine how light-induced defects in a Si:H and native defects in a-Si:H and native defects in a-Si:H and native defects in a SiGe:H affect transport properties in these materials. During this second year, we continued our experiments on electroluminescence (EL) and transient forward bias current, as well as photocurrent before and after light soaking. We started a program to study thin (0.4[mu]m) p-i-n solar cells, and we studied the effect of optical bias on charge transport in a Si:H films. We performed analytical calculations on a model that predicts an exponential energy region for band tails from dilute random charges. We developed a model for the carrier-recombination-lifetime distribution. We solved the equations for H-diffusion including deep trap levels. Lastly, we analyzed simulation data under forward bias in p-i-n devices. The most interesting and important results were obtained on the EL spectra in thin solar cell devices. We found that, at elevated temperatures, thin p-i-n devices displayed primarily defect luminescence (0.8-0.9 eV), while in thick (> 2 [mu]m) devices the luminescence observed was the main band (l.l-1.2 eV). We also found that, in thin cells with buffered layers, p-b-i-n's the main band luminescence was more pronounced than that in simple p-i-n's. For the first time we have distinguished between bulk and junction- controlled recombination.

Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys PDF Download

Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys

Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys

Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys. Annual Subcontract Report, 1 February 1992--31 January 1993

Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys

Energy Research Abstracts

Government Reports Annual Index

Government Reports Announcements & Index

Synerjy

Amorphous Hydrogenated Silicon Germanium Alloys Suitable for Photoelectronic Applications

Research on Defects and Transport in Amorphous-silicon-based Semiconductors

Research on Defects and Transport in Amorphous-silicon-based Semiconductors