Author: Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 376
Book Description
Proceedings of the 16th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces
Index of Conference Proceedings
Author: British Library. Document Supply CentrePublisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 696
Book Description
Wide Bandgap Semiconductors
Author: Kiyoshi TakahashiPublisher: Springer Science & Business Media
ISBN: 3540472355
Category : Technology & Engineering
Languages : en
Pages : 481
Book Description
This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.
Cumulative Book Index
Author: Publisher:
ISBN:
Category : American literature
Languages : en
Pages : 2232
Book Description
A world list of books in the English language.
Surface and Interface Effects in VLSI
Author: Norman G. EinspruchPublisher: Academic Press
ISBN: 1483217760
Category : Technology & Engineering
Languages : en
Pages : 396
Book Description
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Nanopores
Author: Samir M. IqbalPublisher: Springer Science & Business Media
ISBN: 1441982523
Category : Technology & Engineering
Languages : en
Pages : 377
Book Description
Nanopores are nanometer scale holes formed naturally by proteins or cells, and can be used for a variety of applications, including sequencing DNA and detecting anthrax. They can be integrated into artificially constructed encapsulated cells of silicon wafers while allowing small molecules like oxygen, glucose and insulin to pass, while keeping out large system molecules. "Nanopores: Sensing and Fundamental Biological Interactions" examines the emerging research directions surrounding nanopores such as genome sequencing and early disease detection using biomarker identification. Covering the applications of nanopores in genetics, proteomics, drug discovery, early disease detection and detection of emerging environmental threats, it is a must-have book for biomedicalengineers and research scientists.
Index of Conference Proceedings Received
Author: British Library. Document Supply CentrePublisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 792
Book Description
Nuclear Science Abstracts
Author: Subject Catalog
Author: Library of CongressPublisher:
ISBN:
Category : Subject catalogs
Languages : en
Pages : 1044
Book Description
Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces
Author: Raphael SchlesingerPublisher: Springer
ISBN: 3319466240
Category : Science
Languages : en
Pages : 223
Book Description
This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.