Author: Carolyn HanniganPublisher:
ISBN:
Category :
Languages : en
Pages : 32
Book Description
Preparation and Properties of Thin Films of Aluminum Oxide and Iron Oxide on Silicon Substrates
Author: Carolyn HanniganProperties of Aluminum Oxide and Aluminum Oxide Alloys and Their Interfaces with Silicon and Silicon Dioxide
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
A remote plasma enhanced chemical vapor deposition method, RPECVD, was utilized to deposit thin films of aluminum oxide, tantalum oxide, tantalum aluminates, and hafnium aluminates. These films were analyzed using auger electron spectroscopy, AES, Fourier transform infrared spectroscopy, FTIR, X-ray diffraction, XRD, nuclear resonance profiling, NRP, capacitance versus voltage, C-V, and current versus voltage, J-V. FTIR indicated the alloys were homogeneous and pseudobinary in character. Combined with XRD the crystallization temperatures for films>100 nm were measured. The alloys displayed an increased temperature stability with the crystallization points being raise by>100 & deg;C above the end point values. In-situ AES analysis provided a study of the initial formation of the films' interface with the silicon substrate. For Al2O3 these results were correlated to NRP results and indicated a thin, ~0.6 nm, interfacial layer formed during deposition. C-V characteristics indicated a layer of fixed negative charge associated with Al2O3. For Ta2O5 the C-V and J-V results displayed high levels of leakage current, due to a low conduction band offset with silicon. Both aluminates were dominated by electron trapping states. These states were determined to be due to (i) a network 'break-up' component and (ii) localized atomic d-states of hafnium and tantalum atoms.
Structural Characterization of Aluminum Oxide Thin Films Using Solid-state NMR
Author: Yvonne AfriyiePublisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 66
Book Description
Aluminum is an ideal metal for solution-processed oxide dielectrics because it can form polymerized hydroxo networks in aqueous solution and dense amorphous oxide dielectrics by vacuum methods. Atomic layer deposition (ALD) is one of the traditional vacuum methods for thin film deposition, however, ALD is not the most economically feasible method for thin film fabrication due to high operational cost and limitations in large surface-area applications. Solution deposition is a more economical deposition method which is more cost-saving and ideal for large surface area thin film fabrication. The behavior of the solution-solid structural conversion remains an enigma; thus, this research seeks to understand the structural transformation of thin films from solution to solid in order to fabricate films with optimal properties.Aluminum oxide (AlxOy) thin films prepared from aqueous solution-deposited cluster precursors have been proposed for use in devices such as high-k dielectrics in solar cell materials. The films are fabricated with different aluminum-derived precursors, spin-coated on a substrate and annealed at a range of temperatures. The low temperature range of these films are amorphous, therefore lack long range order. Solid-state nuclear magnetic resonance (ssNMR) can be used to determine the amorphous structure of these materials. Herein, a combination of X-ray diffraction (XRD), and NMR techniques are used to elucidate the transformation of these thin films as they are annealed to high temperatures.
Thin Film Metal-Oxides
Author: Shriram RamanathanPublisher: Springer Science & Business Media
ISBN: 1441906649
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
Preparation of Thin Films
Author: Joy GeorgePublisher: CRC Press
ISBN: 9780849306518
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
"Preparation of Thin Films provides a comprehensive account of various deposition techniques for the preparation of thin films of elements, compounds, alloys, ceramics, and semiconductors - emphasizing inorganic compound thin films and discussing high vacuum and chemical deposition methods used for preparing high temperature superconducting oxide thin films. "
Chemical Solution Deposition of Functional Oxide Thin Films
Author: Theodor SchnellerPublisher: Springer Science & Business Media
ISBN: 3211993118
Category : Technology & Engineering
Languages : en
Pages : 801
Book Description
This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.
Thin Films and Heterostructures for Oxide Electronics
Author: Satishchandra B. OgalePublisher: Springer Science & Business Media
ISBN: 0387260897
Category : Technology & Engineering
Languages : en
Pages : 416
Book Description
Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Scientific and Technical Aerospace Reports
Author: The Preparation of (Al2O3)x(SiO2)y Thin Films Using (Al(OSiEt3)3)2 as a Single Source Precursor
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 34
Book Description
Aluminum silicates, (Al2O3)x(SiO2)y, are attractive candidates as corrosion and wear-resistant coatings for metals and other substrates, due to their superior properties of creep resistance, thermal expansion, and chemical stability. Recently, it has been proposed that amorphous alumina-silica films would find application as insulators in multilevel interconnections, and as encapsulants for active devices and thin film components, because they do not suffer the temperature instability of alumina films while retaining the desirable insulating characteristics. Thin films of aluminum silicates have been previously prepared by either sol-gel techniques or the pyrolysis of aluminum-silicon containing polymers. However, there remain some difficulties in obtaining homogeneous and continuous films. Metal-organic chemical vapor deposition (MOCVD) offers and attractive alternative to these methods, since contiguous, homogeneous thin films can be deposited at low temperatures with high growth rates.
Preparation and Characterization of Iron(III) Oxide Films by an Novel Spray Pyrolysis Method
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 17
Book Description
Alpha-Fe203 thin films were deposited on silicon substrates by nebulization of a 0.01 M solution of iron acetylacetonate in a 50% methanol/ water mixture followed by pyrolysis and annealing in flowing oxygen. The resulting films were characterized by x-ray diffraction, scanning electron microscopy, and their electrical transport behavior. The IR transmission spectrum of alpha-Fe203 recorded from such films agreed with published theoretical analysis based on the crystal structure.