Author: A EfremovPublisher:
ISBN:
Category :
Languages : en
Pages : 5
Book Description
Plasma Chemical Etching of Gallium Arsenide in Chlorine
Author: A EfremovDeep Anisotropic Etching of Gallium Arsenide with Chlorine-based Chemistries and SU-8 Mask Using Reactive Ion Etching and High Density Inductive Coupled Plasma Etching Methods
Author: Joy Tsz-Kwan LauPublisher:
ISBN:
Category : Anisotropy
Languages : en
Pages : 98
Book Description
Chlorine Reactive Ion Etching of Gallium Arsenide
Author: Joseph T. TustinPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 222
Book Description
Influence of Gold Particles on Gallium Arsenide Substrate when Etched in Chlorine Plasma
Author: Erika Courtney LentPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Unetched samples had a relatively smooth surface while the etched samples exhibited a rough surface characteristic of etching. Through this research using these methods it was shown that gold does not influence the etching of gallium arsenide in chlorine plasma.
Reactive Ion Etching of Gallium Arsenide and Aluminum Gallium Arsenide Using Boron Trichloride and Chlorine
Author: Douglas Ray HendricksPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 76
Book Description
Handbook of Advanced Plasma Processing Techniques
Author: R.J. ShulPublisher: Springer Science & Business Media
ISBN: 3642569897
Category : Technology & Engineering
Languages : en
Pages : 664
Book Description
Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
Inductively Coupled Plasma Etching of Silicon and Gallium Arsenide
Author: Blake B. RiceGallium Arsenide Technology
Author: David K. FerryPublisher: Sams Technical Publishing
ISBN:
Category : Science
Languages : en
Pages : 602
Book Description
Scientific Bulletin
Author: Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan
Author: IkegamiPublisher: CRC Press
ISBN: 9780750302500
Category : Technology & Engineering
Languages : en
Pages : 1002
Book Description
Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.