Physics of IV-VI Compounds and Alloys PDF Download

Author: Sohrab Rabii
Publisher: Gordon & Breach Publishing Group
ISBN:
Category : Science
Languages : en
Pages : 272

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Author: Sohrab Rabii
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Schrab Rabii
Publisher:
ISBN:
Category :
Languages : en
Pages : 253

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Author:
Publisher: Springer
ISBN: 3540395342
Category : Science
Languages : en
Pages : 109

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Author: Sohrab RABII
Publisher:
ISBN: 9780677050706
Category :
Languages : en
Pages : 253

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Author: T. F. Connolly
Publisher: Springer Science & Business Media
ISBN: 1468462040
Category : Science
Languages : en
Pages : 219

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responsibility.) To Betty Edwards and Emily Copenhaver my thanks for what must have seemed endless typing, retyping and correcting of these bibliographies over a span of years. Availability of Documents U. S. Government contractor reports, usually identified by an alpha-numeric report number, can be purchased from National Technical Information Service U. S. Department of Commerce Springfield, Virginia 22151 and, often, on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa England Monographs and reports of the National Bureau of Standards are for sale by Superintendent of Documents U. S. Government Printing Office Washington, D. C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North or South America from University Microfilms Dissertation Copies P. O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Other Information Centers and New Journals New journals Information centers Field and and other sources serials Ultra purification 4, 8, 11, 13, 15, 16,19, 20, 9,11,15, 24, 31, 32 and 21, 28, 30, 32, 33, 42, 58, 59 crystal growth ix Preface Field Information centers New journals and and other -sources serials Characterization Miscellaneous 3,4, 8, 11, 13, 16, 19, 20, 1,3,4,8,11,15,17, 21, 26, 28, 30, 31, 32, 33, 35, 24, 25, 28, 29, 30, 31, 37, 38, 39, 40, 42, 46, 53, 56, 32 58, 60, 61, 62

Author: Vasyl Tomashyk
Publisher: CRC Press
ISBN: 1000923290
Category : Science
Languages : en
Pages : 1509

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IV–VI and IV–VI2 semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in quaternary systems based on IV–VI and IV–VI2 semiconductors, providing the first systematic account of phase equilibria in quaternary systems based on IV–VI and IV–VI2 semiconductors and making research originally published in Ukrainian and Russian accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid-state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid-state physicists. Key Features: • Provides up-to-date experimental and theoretical information. • A source of information for synthesizing semiconducting materials with predetermined properties. • Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases.

Author: Brian R. Pamplin
Publisher: Elsevier
ISBN: 1483155331
Category : Science
Languages : en
Pages : 181

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Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.

Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 824

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Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.

Author: Vasyl Tomashyk
Publisher: CRC Press
ISBN: 1040101356
Category : Science
Languages : en
Pages : 630

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IV-VI and IV-VI2 semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as infrared lasers and detectors. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about the phase relations in multinary systems based on IV-VI and IV-VI2 semiconductors, providing the first systematic account of phase equilibria in multinary systems based on IV-VI and IV-VI2 semiconductors and making research originally published in Ukrainian and Russian accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to researchers of phase equilibria, inorganic chemists, and solid state physicists. Key Features: Provides up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases