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Papers Presented at the 3rd [Third] International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference

Author: International Symposium on Silicon Molecular Beam Epitaxy
Publisher:
ISBN:
Category :
Languages : en
Pages : 462

Book Description

Papers Presented at the 3rd [Third] International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference

Author: International Symposium on Silicon Molecular Beam Epitaxy
Publisher:
ISBN:
Category :
Languages : en
Pages : 462

Book Description

Papers presented at the 3rd International Symposium on Silicon Molecular Beam Epitaxy : Symposium A of the 1989 E-MRS Conference, Strasbourg, France, May 30 - June 2, 1989. 1 (1989)

Author: International Symposium on Silicon Molecular Beam Epitaxy (3, 1989, Strasbourg)
Publisher:
ISBN:
Category :
Languages : en
Pages : 364

Book Description

Papers Presented at the 3rd International Symposium on Silicon Molecular Beam Epitaxy

Author: International Symposium on Silicon Molecular Beam Epitaxy 3, 1989, Strasbourg
Publisher:
ISBN:
Category :
Languages : en
Pages : 364

Book Description

Third International Symposium on Silicon Molecular Beam Epitaxy

Author: International Symposium on Silicon Molecular Beam Epitaxy (3, 1989, Strasbourg)
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description

3rd International Symposium on Silicon Molecular Beam Epitaxy

Author: International Symposium on Silicon Molecular Beam Epitaxy (3, 1989, Strasbourg)
Publisher:
ISBN:
Category :
Languages : en
Pages : 364

Book Description

Silicon Molecular Beam Epitaxy

Author: Erich Kasper
Publisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 484

Book Description
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.

3rd International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference, Strasbourg, France, May 30 - June 2. Part II.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description