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Long-Term Reliability of Nanometer VLSI Systems

Long-Term Reliability of Nanometer VLSI Systems PDF Author: Sheldon Tan
Publisher: Springer Nature
ISBN: 3030261727
Category : Technology & Engineering
Languages : en
Pages : 487

Book Description
This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.

Long-Term Reliability of Nanometer VLSI Systems

Long-Term Reliability of Nanometer VLSI Systems PDF Author: Sheldon Tan
Publisher: Springer Nature
ISBN: 3030261727
Category : Technology & Engineering
Languages : en
Pages : 487

Book Description
This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.

Advanced Interconnects for ULSI Technology

Advanced Interconnects for ULSI Technology PDF Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 0470662549
Category : Technology & Engineering
Languages : en
Pages : 616

Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Fundamentals of Electromigration-Aware Integrated Circuit Design

Fundamentals of Electromigration-Aware Integrated Circuit Design PDF Author: Jens Lienig
Publisher: Springer
ISBN: 3319735586
Category : Technology & Engineering
Languages : en
Pages : 171

Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Copper Interconnect Technology

Copper Interconnect Technology PDF Author: Tapan Gupta
Publisher: Springer Science & Business Media
ISBN: 1441900764
Category : Technology & Engineering
Languages : en
Pages : 433

Book Description
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.

Guide to NIST (National Institute of Standards and Technology)

Guide to NIST (National Institute of Standards and Technology) PDF Author: DIANE Publishing Company
Publisher: DIANE Publishing
ISBN: 9780788146237
Category : Technology & Engineering
Languages : en
Pages : 168

Book Description
Gathers in one place descriptions of NIST's many programs, products, services, and research projects, along with contact names, phone numbers, and e-mail and World Wide Web addresses for further information. It is divided into chapters covering each of NIST's major operating units. In addition, each chapter on laboratory programs includes subheadings for NIST organizational division or subject areas. Covers: electronics and electrical engineering; manufacturing engineering; chemical science and technology; physics; materials science and engineering; building and fire research and information technology.

Failure Analysis of Integrated Circuits

Failure Analysis of Integrated Circuits PDF Author: Lawrence C. Wagner
Publisher: Springer Science & Business Media
ISBN: 1461549191
Category : Technology & Engineering
Languages : en
Pages : 256

Book Description
This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.

Practical Reliability Of Electronic Equipment And Products

Practical Reliability Of Electronic Equipment And Products PDF Author: Eugene R. Hnatek
Publisher: CRC Press
ISBN: 0824743547
Category : Technology & Engineering
Languages : en
Pages : 433

Book Description
Practical Reliability of Electronic Equipment and Products will help electrical, electronics, manufacturing, mechanical, systems design, and reliability engineers; electronics production managers; electronic circuit designers; and upper-level undergraduate and graduate students in these disciplines.

Guide to NIST

Guide to NIST PDF Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category : Science and state
Languages : en
Pages : 178

Book Description


ISTFA 2007 Proceedings of the 33rd International Symposium for Testing and Failure Analysis

ISTFA 2007 Proceedings of the 33rd International Symposium for Testing and Failure Analysis PDF Author: ASM International
Publisher: ASM International
ISBN: 1615030905
Category : Technology & Engineering
Languages : en
Pages : 372

Book Description
Printbegrænsninger: Der kan printes 10 sider ad gangen og max. 40 sider pr. session

Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 946

Book Description